P

Inventor

CHEN GARY

US47 patents
⚠️ This page may combine multiple inventors who share the name “CHEN GARY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

20 patents
US6592777B2Jul 15, 2003

Manufacture and cleaning of a semiconductor

MICRON TECHNOLOGY INC24 citations96
US6573175B1Jun 3, 2003

Dry low k film application for interlevel dielectric and method of cleaning etched features

MICRON TECHNOLOGY INC37 citations96
US6455906B2Sep 24, 2002

Gate stack structure with conductive silicide segment that has substantially etched nitride and/or oxynitride defects protruding from its sidewalls

MICRON TECHNOLOGY INC22 citations96
US6391794B1May 21, 2002

Composition and method for cleaning residual debris from semiconductor surfaces

MICRON TECHNOLOGY INC66 citations96
US6358788B1Mar 19, 2002

Method of fabricating a wordline in a memory array of a semiconductor device

MICRON TECHNOLOGY INC40 citations96
US6162738ADec 19, 2000

Cleaning compositions for high dielectric structures and methods of using same

MICRON TECHNOLOGY INC55 citations96
US7211200B2May 1, 2007

Manufacture and cleaning of a semiconductor

MICRON TECHNOLOGY INC10 citations93
US6890865B2May 10, 2005

Low k film application for interlevel dielectric and method of cleaning etched features

MICRON TECHNOLOGY INC24 citations93
US6664611B2Dec 16, 2003

Composition and method for cleaning residual debris from semiconductor surfaces

MICRON TECHNOLOGY INC21 citations93
US6627913B2Sep 30, 2003

Insulation of an MRAM device through a self-aligned spacer

MICRON TECHNOLOGY INC40 citations92
US6509278B1Jan 21, 2003

Method of forming a semiconductor contact that includes selectively removing a Ti-containing layer from the surface

MICRON TECHNOLOGY INC20 citations92
US6703303B2Mar 9, 2004

Method of manufacturing a portion of a memory

MICRON TECHNOLOGY INC9 citations82
US6686275B2Feb 3, 2004

Method of selectively removing metal nitride or metal oxynitride extrusions from a semmiconductor structure

MICRON TECHNOLOGY INC8 citations82
US6933580B2Aug 23, 2005

Semiconductor structure with substantially etched oxynitride defects protruding therefrom

MICRON TECHNOLOGY INC7 citations74
US6815368B2Nov 9, 2004

Semiconductor substrate cleaning

MICRON TECHNOLOGY INC6 citations74
US6794307B2Sep 21, 2004

Method for cleaning residual debris from semiconductor surfaces

MICRON TECHNOLOGY INC9 citations74
US6743720B2Jun 1, 2004

Method of manufacturing a portion of a memory by selectively etching to remove metal nitride or metal oxynitride extrusions

MICRON TECHNOLOGY INC5 citations74
US6693354B2Feb 17, 2004

Semiconductor structure with substantially etched nitride defects protruding therefrom

MICRON TECHNOLOGY INC4 citations74
US6605863B2Aug 12, 2003

Low k film application for interlevel dielectric and method of cleaning etched features

MICRON TECHNOLOGY INC12 citations74
US7087534B2Aug 8, 2006

Semiconductor substrate cleaning

MICRON TECHNOLOGY INC4 citations63

US ARMY

4 patents

PANASONIC AVIONICS CORP

4 patents

XIAO DEYUAN

3 patents

CHANG HONG

2 patents

DESIGN WEST TECH INC

2 patents

SEMICONDUCTOR MFG INT SHANGHAI

2 patents

OMNITEK PARTNERS LLC

1 patent

(unassigned)

1 patent

ALPHA & OMEGA SEMICONDUCTOR

1 patent

SABATINI JESSE J

1 patent

ALLIANT TECHSYSTEMS INC

1 patent

GHSP INC

1 patent

PERASO TECH INC

1 patent

MARVELL INT LTD

1 patent

XIAO DE YUAN

1 patent

TRIDONIC GMBH & CO KG

1 patent