Inventor

SO KOON CHONG

US67 patents

⚠️ This page may combine multiple inventors who share the name “SO KOON CHONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SO KOON CHONG

GEN SEMICONDUCTOR INC

Trench DMOS transistor with embedded trench schottky rectifier

Trench MOSFET device with improved on-resistance

Trench DMOS transistor with embedded trench schottky rectifier

Devices and methods for addressing optical edge effects in connection with etched trenches

Trench MOSFET with structure having low gate charge

Trench MOSFET with double-diffused body profile

Trench DMOS transistor with embedded trench schottky rectifier

Trench MOSFET having low gate charge

Method of forming a trench DMOS having reduced threshold voltage

Trench MOSFET having low gate charge

High speed trench DMOS

Symmetric trench MOSFET device and method of making same

Semiconductor trench device with enhanced gate oxide integrity structure

Trench schottky rectifier

DMOS transistor structure having improved performance

Trench DMOS transistor having reduced punch-through

Trench DMOS transistor having a double gate structure

Trench DMOS transistor having lightly doped source structure

High speed trench DMOS

Trench MOSFET device with polycrystalline silicon source contact structure

Trench schottky rectifier

Trench DMOS device with improved drain contact

Two-mask trench schottky diode

Trench DMOS transistor having a zener diode for protection from electro-static discharge

Method for forming trench MOSFET device with low parasitic resistance

Trench DMOS transistor having a zener diode for protection from electro-static discharge

Trench schottky rectifier

Method of forming a trench MOSFET with structure having increased cell density and low gate charge

Integrated circuit resistant to the formation of cracks in a passivation layer

High speed trench DMOS

MEGAMOS CORP

MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches

Structure to provide effective channel-stop in termination areas for trenched power transistors

Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask

Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance

Punch-through prevention in trenched DMOS with poly-silicon layer covering trench corners

Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings

Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness

MOSFET structure and fabrication process for decreasing threshold voltage

DMOS fabrication process implemented with reduced number of masks

Semiconductor structure with controlled breakdown protection

Semiconductor device fabrication with reduced masking steps

MAGEPOWER SEMICONDUCTOR CORP

Method of forming a semiconductor structure having reduced threshold voltage and high punch-through tolerance

Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown

Method of forming a semiconductor structure having laterally merged body layer

MAGEMOS CORP

DMOS transistors having trenched gate oxide

Power MOSFET fabrication process to achieve enhanced ruggedness, cost savings, and product reliability

ANDERSON SAMUEL

Semiconductor devices with sealed, unlined trenches and methods of forming same

Semiconductor devices with sealed, unlined trenches and methods of forming same

THIRD DIMENSION 3D SC INC

Method for manufacturing a superjunction device with wide mesas

MAGEPOSER SEMICONDUCTOR CORP

High speed MOSFET power device with enhanced ruggedness fabricated by simplified processes