Inventor

MATSUSHITA YOSHIAKI

JP36 patents

⚠️ This page may combine multiple inventors who share the name “MATSUSHITA YOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUSHITA YOSHIAKI

TOSHIBA KK

Vapor phase epitaxial growth apparatus

Insulated-gate transistor having narrow-bandgap-source

Filling contact hole with selectively deposited EPI and poly silicon

Semiconductor substrate

Semiconductor device with monocrystalline gate insulating film

Substrate having shallow trench isolation

Wafer processsing method for manufacturing wafers having contaminant-gettering damage on one surface

Semiconductor substrate and method of manufacturing same

Semiconductor device and a method for manufacturing the same

Crystal pulling apparatus

Gettering process with multi-step annealing and inert ion implantation

Etching solution for evaluating crystal faults

Method of manufacturing a substrate having shallow trench isolation

Semiconductor device with improved wiring contact portion

Semiconductor device having a well electrically insulated from the substrate

Method of manufacturing a semiconductor device having improved contact resistance characteristics

Preparation method of selective growth silicon layer doped with impurities

Two step vapor-phase epitaxial growth process for control of autodoping

Method of growing a resistive epitaxial layer on a short lifetime epi-layer

Dielectrically isolated substrate and method for manufacturing the same

Semiconductor device and method of producing the same

System for analyzing metal impurity on the surface of a single crystal semiconductor by using total reflection of x-rays fluorescence

Method for predicting density of micro crystal defects in semiconductor element from silicon wafer used in the manufacture of the element, and infrared absorption measurement apparatus for this method

Insulation film for a semiconductor device

VLSI TECHNOLOGY RES ASS

Method of forming nondefective zone in silicon single crystal wafer by two stage-heat treatment

Method of making fault-free surface zone in semiconductor devices by step-wise heat treating

Method of treating a silicon single crystal ingot

Method of manufacturing a single crystal silicon rod

HITACHI SHIPBUILDING ENG CO

Absorption-type heat pump

Absorption - type refrigeration system

Absorption type heat exchanging apparatus

HITACHI LTD

Method for producing a ceramic-coated blade of gas turbine

Ceramic-coated blade of gas turbine and method of producing same

NGK INSULATORS LTD

Process for production of coated ceramic member

Coated ceramic member and process for production thereof

TOKYO SHIBAURA ELECTRIC CO

Method for forming monocrystalline semiconductor film on insulating film