Inventor
YAGISHITA ATSUSHI
JP52 patents
⚠️ This page may combine multiple inventors who share the name “YAGISHITA ATSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
44 patentsUS6310367B1Oct 30, 2001
MOS transistor having a tensile-strained SI layer and a compressive-strained SI-GE layer
TOSHIBA KK213 citations99
US6054355AApr 25, 2000
Method of manufacturing a semiconductor device which includes forming a dummy gate
TOSHIBA KK338 citations99
US6515338B1Feb 4, 2003
Semiconductor device and manufacturing method therefor
TOSHIBA KK82 citations98
US6346438B1Feb 12, 2002
Method of manufacturing a semiconductor device
TOSHIBA KK91 citations98
US6664592B2Dec 16, 2003
Semiconductor device with groove type channel structure
TOSHIBA KK60 citations96
US5650339AJul 22, 1997
Method of manufacturing thin film transistor
TOSHIBA KK53 citations96
US5994756ANov 30, 1999
Substrate having shallow trench isolation
TOSHIBA KK56 citations94
US7820551B2Oct 26, 2010
Semiconductor device having fins FET and manufacturing method thereof
TOSHIBA KK20 citations93
US7608890B2Oct 27, 2009
Semiconductor device and method of manufacturing semiconductor device
TOSHIBA KK17 citations93
US7314787B2Jan 1, 2008
Method of manufacturing a semiconductor device
TOSHIBA KK35 citations93
US7214576B1May 8, 2007
Manufacturing method of semiconductor device
TOSHIBA KK30 citations93
US6979846B2Dec 27, 2005
Semiconductor device and manufacturing method thereof
TOSHIBA KK31 citations93
US6887747B2May 3, 2005
Method of forming a MISFET having a schottky junctioned silicide
TOSHIBA KK39 citations93
US6879001B2Apr 12, 2005
Semiconductor device and manufacturing method of semiconductor device
TOSHIBA KK14 citations93
US6607952B1Aug 19, 2003
Semiconductor device with a disposable gate and method of manufacturing the same
TOSHIBA KK23 citations93
US6465823B1Oct 15, 2002
Dynamic threshold voltage metal insulator semiconductor effect transistor
TOSHIBA KK26 citations93
US6087698AJul 11, 2000
Semiconductor device and method of manufacturing the same
TOSHIBA KK25 citations93
US5872383AFeb 16, 1999
Semiconductor device and method of manufacturing the same
TOSHIBA KK20 citations93
US5350708ASep 27, 1994
Method of making dynamic random access semiconductor memory device
TOSHIBA KK23 citations93
US7723171B2May 25, 2010
Semiconductor device and method of fabricating the same
TOSHIBA KK20 citations92
US5675176AOct 7, 1997
Semiconductor device and a method for manufacturing the same
TOSHIBA KK43 citations92
US7755104B2Jul 13, 2010
FinFET pMOS double gate semiconductor device with uniaxial tensile strain applied to channel by shrinkable gate electrode material, current flow in <110> crystal orientation, and source and drain Schottky contacts with channel and manufacturing method thereof
TOSHIBA KK17 citations84
US7537978B2May 26, 2009
Semiconductor device and manufacturing method thereof
TOSHIBA KK8 citations84
US7465624B2Dec 16, 2008
Method of manufacturing semiconductor device
TOSHIBA KK9 citations84
US7405449B2Jul 29, 2008
Semiconductor device and method of manufacturing the same
TOSHIBA KK14 citations84
US7371644B2May 13, 2008
Semiconductor device and method of fabricating the same
TOSHIBA KK10 citations84
US7247913B2Jul 24, 2007
Semiconductor device having a Schottky source/drain transistor
TOSHIBA KK11 citations84
US6919260B1Jul 19, 2005
Method of manufacturing a substrate having shallow trench isolation
TOSHIBA KK16 citations82
US5250830AOct 5, 1993
Dynamic type semiconductor memory device and its manufacturing method
TOSHIBA KK20 citations82
US7795682B2Sep 14, 2010
Semiconductor device and method manufacturing semiconductor device
TOSHIBA KK5 citations74
US7208353B2Apr 24, 2007
Semiconductor device and manufacturing method thereof
TOSHIBA KK5 citations74
US7208797B2Apr 24, 2007
Semiconductor device
TOSHIBA KK8 citations74
US6812535B2Nov 2, 2004
Semiconductor device with a disposable gate and method of manufacturing the same
TOSHIBA KK9 citations74
US6794720B2Sep 21, 2004
Dynamic threshold voltage metal insulator field effect transistor
TOSHIBA KK10 citations74
US5739575AApr 14, 1998
Dielectrically isolated substrate and method for manufacturing the same
TOSHIBA KK16 citations73
US8053292B2Nov 8, 2011
Semiconductor device and method of manufacturing semiconductor device
TOSHIBA KK1 citations63
US7915130B2Mar 29, 2011
Method of manufacturing a semiconductor device
TOSHIBA KK5 citations63
US7488631B2Feb 10, 2009
Semiconductor device having a schottky source/drain transistor
TOSHIBA KK3 citations63
US7479423B2Jan 20, 2009
Semiconductor device and manufacturing method of semiconductor device
TOSHIBA KK4 citations63
US7242064B2Jul 10, 2007
Semiconductor device and method of manufacturing the same
TOSHIBA KK4 citations63
US7064024B2Jun 20, 2006
Semiconductor device and method of fabricating the same
TOSHIBA KK3 citations63
US7772076B2Aug 10, 2010
Method of manufacturing semiconductor device using dummy gate wiring layer
TOSHIBA KK0 citations52
US7462917B2Dec 9, 2008
Semiconductor device and method of fabricating the same
TOSHIBA KK0 citations52
US7198994B2Apr 3, 2007
Semiconductor device and manufacturing method of semiconductor device
TOSHIBA KK0 citations52
YAGISHITA ATSUSHI
3 patentsUS8134209B2Mar 13, 2012
Semiconductor device and method for manufacturing the same
YAGISHITA ATSUSHI26 citations91
US8124465B2Feb 28, 2012
Method for manufacturing a semiconductor device having a source extension region and a drain extension region
YAGISHITA ATSUSHI15 citations83
US8138031B2Mar 20, 2012
Semiconductor device and method of manufacturing semiconductor device
YAGISHITA ATSUSHI5 citations73
TOKYO SHIBAURA ELECTRIC CO
1 patentKANEKO AKIO
1 patentAIST
1 patentShowing the top 50 of 52 patents by PatentIndex Score.