P

Inventor

VASHCHENKO VLADISLAV

US150 patents
⚠️ This page may combine multiple inventors who share the name “VASHCHENKO VLADISLAV”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAT SEMICONDUCTOR CORP

47 patents
US7180379B1Feb 20, 2007

Laser powered clock circuit with a substantially reduced clock skew

NAT SEMICONDUCTOR CORP275 citations99
US7910951B2Mar 22, 2011

Low side zener reference voltage extended drain SCR clamps

NAT SEMICONDUCTOR CORP22 citations93
US7910950B1Mar 22, 2011

High voltage ESD LDMOS-SCR with gate reference voltage

NAT SEMICONDUCTOR CORP23 citations93
US7394133B1Jul 1, 2008

Dual direction ESD clamp based on snapback NMOS cell with embedded SCR

NAT SEMICONDUCTOR CORP28 citations93
US7221036B1May 22, 2007

BJT with ESD self protection

NAT SEMICONDUCTOR CORP16 citations93
US7145187B1Dec 5, 2006

Substrate independent multiple input bi-directional ESD protection structure

NAT SEMICONDUCTOR CORP26 citations93
US7141831B1Nov 28, 2006

Snapback clamp having low triggering voltage for ESD protection

NAT SEMICONDUCTOR CORP25 citations93
US7027277B1Apr 11, 2006

High voltage tolerant electrostatic discharge (ESD) protection clamp circuitry

NAT SEMICONDUCTOR CORP21 citations93
US7005388B1Feb 28, 2006

Method of forming through-the-wafer metal interconnect structures

NAT SEMICONDUCTOR CORP23 citations93
US6985386B1Jan 10, 2006

Programming method for nonvolatile memory cell

NAT SEMICONDUCTOR CORP30 citations93
US6964907B1Nov 15, 2005

Method of etching a lateral trench under an extrinsic base and improved bipolar transistor

NAT SEMICONDUCTOR CORP36 citations93
US6903978B1Jun 7, 2005

Method of PMOS stacked-gate memory cell programming enhancement utilizing stair-like pulses of control gate voltage

NAT SEMICONDUCTOR CORP20 citations93
US6862216B1Mar 1, 2005

Non-volatile memory cell with gated diode and MOS transistor and method for using such cell

NAT SEMICONDUCTOR CORP29 citations93
US6560081B1May 6, 2003

Electrostatic discharge (ESD) protection circuit

NAT SEMICONDUCTOR CORP42 citations93
US6433368B1Aug 13, 2002

LVTSCR with a holding voltage that is greater than a DC bias voltage on a to-be-protected node

NAT SEMICONDUCTOR CORP29 citations93
US6407445B1Jun 18, 2002

MOSFET-based electrostatic discharge (ESD) protection structure with a floating heat sink

NAT SEMICONDUCTOR CORP29 citations93
US7119431B1Oct 10, 2006

Apparatus and method for forming heat sinks on silicon on insulator wafers

NAT SEMICONDUCTOR CORP19 citations92
US7023029B1Apr 4, 2006

Complementary vertical SCRs for SOI and triple well processes

NAT SEMICONDUCTOR CORP23 citations92
US6963091B1Nov 8, 2005

Spin-injection devices on silicon material for conventional BiCMOS technology

NAT SEMICONDUCTOR CORP43 citations92
US6956269B1Oct 18, 2005

Spin-polarization of carriers in semiconductor materials for spin-based microelectronic devices

NAT SEMICONDUCTOR CORP21 citations92
US6906357B1Jun 14, 2005

Electrostatic discharge (ESD) protection structure with symmetrical positive and negative ESD protection

NAT SEMICONDUCTOR CORP25 citations92
US6797555B1Sep 28, 2004

Direct implantation of fluorine into the channel region of a PMOS device

NAT SEMICONDUCTOR CORP31 citations92
US6784029B1Aug 31, 2004

Bi-directional ESD protection structure for BiCMOS technology

NAT SEMICONDUCTOR CORP35 citations92
US6717219B1Apr 6, 2004

High holding voltage ESD protection structure for BiCMOS technology

NAT SEMICONDUCTOR CORP24 citations92
US6586317B1Jul 1, 2003

Method of forming a zener diode in a npn and pnp bipolar process flow that requires no additional steps to set the breakdown voltage

NAT SEMICONDUCTOR CORP48 citations91
US7056761B1Jun 6, 2006

Avalanche diode with breakdown voltage controlled by gate length

NAT SEMICONDUCTOR CORP26 citations89
US7973386B1Jul 5, 2011

ESD protection bipolar device with internal avalanche diode

NAT SEMICONDUCTOR CORP9 citations84
US7915678B1Mar 29, 2011

Snapback capable NLDMOS, DMOS and extended voltage NMOS devices

NAT SEMICONDUCTOR CORP9 citations84
US7839242B1Nov 23, 2010

Magnetic MEMS switching regulator

NAT SEMICONDUCTOR CORP10 citations84
US7800127B1Sep 21, 2010

ESD protection device with controllable triggering characteristics using driver circuit related to power supply

NAT SEMICONDUCTOR CORP12 citations84
US7754540B2Jul 13, 2010

Method of forming a SiGe DIAC ESD protection structure

NAT SEMICONDUCTOR CORP15 citations84
US7651897B2Jan 26, 2010

Integrated circuit with metal heat flow path coupled to transistor and method for manufacturing such circuit

NAT SEMICONDUCTOR CORP15 citations84
US7639464B1Dec 29, 2009

High holding voltage dual direction ESD clamp

NAT SEMICONDUCTOR CORP16 citations84
US7285805B1Oct 23, 2007

Low reference voltage ESD protection device

NAT SEMICONDUCTOR CORP10 citations84
US7268398B1Sep 11, 2007

ESD protection cell with active pwell resistance control

NAT SEMICONDUCTOR CORP10 citations84
US7217966B1May 15, 2007

Self-protecting transistor array

NAT SEMICONDUCTOR CORP16 citations84
US7202538B1Apr 10, 2007

Ultra low leakage MOSFET transistor

NAT SEMICONDUCTOR CORP10 citations84
US7180133B1Feb 20, 2007

Method and structure for addressing hot carrier degradation in high voltage devices

NAT SEMICONDUCTOR CORP10 citations84
US7105373B1Sep 12, 2006

Vertical photodiode with heavily-doped regions of alternating conductivity types

NAT SEMICONDUCTOR CORP15 citations84
US7027278B1Apr 11, 2006

Stacked high-voltage ESD protection clamp with triggering voltage circuit control

NAT SEMICONDUCTOR CORP11 citations84
US6946690B1Sep 20, 2005

High holding voltage ESD protection structure and method

NAT SEMICONDUCTOR CORP13 citations84
US6947331B1Sep 20, 2005

Method of erasing an EEPROM cell utilizing a frequency/time domain based erased signal

NAT SEMICONDUCTOR CORP15 citations84
US6894881B1May 17, 2005

ESD protection methods and devices using additional terminal in the diode structures

NAT SEMICONDUCTOR CORP13 citations84
US6822294B1Nov 23, 2004

High holding voltage LVTSCR

NAT SEMICONDUCTOR CORP14 citations84
US6815732B1Nov 9, 2004

High-voltage silicon controlled rectifier structure

NAT SEMICONDUCTOR CORP13 citations84
US6720624B1Apr 13, 2004

LVTSCR-like structure with internal emitter injection control

NAT SEMICONDUCTOR CORP14 citations84
US6559507B1May 6, 2003

Compact ballasting region design for snapback N-MOS ESD protection structure using multiple local N+ region blocking

NAT SEMICONDUCTOR CORP13 citations84

VASHCHENKO VLADISLAV

2 patents

EASTMAN KODAK CO

1 patent

Showing the top 50 of 150 patents by PatentIndex Score.