Inventor
VASHCHENKO VLADISLAV
US150 patents
⚠️ This page may combine multiple inventors who share the name “VASHCHENKO VLADISLAV”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NAT SEMICONDUCTOR CORP
47 patentsUS7180379B1Feb 20, 2007
Laser powered clock circuit with a substantially reduced clock skew
NAT SEMICONDUCTOR CORP275 citations99
US7910951B2Mar 22, 2011
Low side zener reference voltage extended drain SCR clamps
NAT SEMICONDUCTOR CORP22 citations93
US7910950B1Mar 22, 2011
High voltage ESD LDMOS-SCR with gate reference voltage
NAT SEMICONDUCTOR CORP23 citations93
US7394133B1Jul 1, 2008
Dual direction ESD clamp based on snapback NMOS cell with embedded SCR
NAT SEMICONDUCTOR CORP28 citations93
US7221036B1May 22, 2007
BJT with ESD self protection
NAT SEMICONDUCTOR CORP16 citations93
US7145187B1Dec 5, 2006
Substrate independent multiple input bi-directional ESD protection structure
NAT SEMICONDUCTOR CORP26 citations93
US7141831B1Nov 28, 2006
Snapback clamp having low triggering voltage for ESD protection
NAT SEMICONDUCTOR CORP25 citations93
US7027277B1Apr 11, 2006
High voltage tolerant electrostatic discharge (ESD) protection clamp circuitry
NAT SEMICONDUCTOR CORP21 citations93
US7005388B1Feb 28, 2006
Method of forming through-the-wafer metal interconnect structures
NAT SEMICONDUCTOR CORP23 citations93
US6985386B1Jan 10, 2006
Programming method for nonvolatile memory cell
NAT SEMICONDUCTOR CORP30 citations93
US6964907B1Nov 15, 2005
Method of etching a lateral trench under an extrinsic base and improved bipolar transistor
NAT SEMICONDUCTOR CORP36 citations93
US6903978B1Jun 7, 2005
Method of PMOS stacked-gate memory cell programming enhancement utilizing stair-like pulses of control gate voltage
NAT SEMICONDUCTOR CORP20 citations93
US6862216B1Mar 1, 2005
Non-volatile memory cell with gated diode and MOS transistor and method for using such cell
NAT SEMICONDUCTOR CORP29 citations93
US6560081B1May 6, 2003
Electrostatic discharge (ESD) protection circuit
NAT SEMICONDUCTOR CORP42 citations93
US6433368B1Aug 13, 2002
LVTSCR with a holding voltage that is greater than a DC bias voltage on a to-be-protected node
NAT SEMICONDUCTOR CORP29 citations93
US6407445B1Jun 18, 2002
MOSFET-based electrostatic discharge (ESD) protection structure with a floating heat sink
NAT SEMICONDUCTOR CORP29 citations93
US7119431B1Oct 10, 2006
Apparatus and method for forming heat sinks on silicon on insulator wafers
NAT SEMICONDUCTOR CORP19 citations92
US7023029B1Apr 4, 2006
Complementary vertical SCRs for SOI and triple well processes
NAT SEMICONDUCTOR CORP23 citations92
US6963091B1Nov 8, 2005
Spin-injection devices on silicon material for conventional BiCMOS technology
NAT SEMICONDUCTOR CORP43 citations92
US6956269B1Oct 18, 2005
Spin-polarization of carriers in semiconductor materials for spin-based microelectronic devices
NAT SEMICONDUCTOR CORP21 citations92
US6906357B1Jun 14, 2005
Electrostatic discharge (ESD) protection structure with symmetrical positive and negative ESD protection
NAT SEMICONDUCTOR CORP25 citations92
US6797555B1Sep 28, 2004
Direct implantation of fluorine into the channel region of a PMOS device
NAT SEMICONDUCTOR CORP31 citations92
US6784029B1Aug 31, 2004
Bi-directional ESD protection structure for BiCMOS technology
NAT SEMICONDUCTOR CORP35 citations92
US6717219B1Apr 6, 2004
High holding voltage ESD protection structure for BiCMOS technology
NAT SEMICONDUCTOR CORP24 citations92
US6586317B1Jul 1, 2003
Method of forming a zener diode in a npn and pnp bipolar process flow that requires no additional steps to set the breakdown voltage
NAT SEMICONDUCTOR CORP48 citations91
US7056761B1Jun 6, 2006
Avalanche diode with breakdown voltage controlled by gate length
NAT SEMICONDUCTOR CORP26 citations89
US7973386B1Jul 5, 2011
ESD protection bipolar device with internal avalanche diode
NAT SEMICONDUCTOR CORP9 citations84
US7915678B1Mar 29, 2011
Snapback capable NLDMOS, DMOS and extended voltage NMOS devices
NAT SEMICONDUCTOR CORP9 citations84
US7839242B1Nov 23, 2010
Magnetic MEMS switching regulator
NAT SEMICONDUCTOR CORP10 citations84
US7800127B1Sep 21, 2010
ESD protection device with controllable triggering characteristics using driver circuit related to power supply
NAT SEMICONDUCTOR CORP12 citations84
US7754540B2Jul 13, 2010
Method of forming a SiGe DIAC ESD protection structure
NAT SEMICONDUCTOR CORP15 citations84
US7651897B2Jan 26, 2010
Integrated circuit with metal heat flow path coupled to transistor and method for manufacturing such circuit
NAT SEMICONDUCTOR CORP15 citations84
US7639464B1Dec 29, 2009
High holding voltage dual direction ESD clamp
NAT SEMICONDUCTOR CORP16 citations84
US7285805B1Oct 23, 2007
Low reference voltage ESD protection device
NAT SEMICONDUCTOR CORP10 citations84
US7268398B1Sep 11, 2007
ESD protection cell with active pwell resistance control
NAT SEMICONDUCTOR CORP10 citations84
US7217966B1May 15, 2007
Self-protecting transistor array
NAT SEMICONDUCTOR CORP16 citations84
US7202538B1Apr 10, 2007
Ultra low leakage MOSFET transistor
NAT SEMICONDUCTOR CORP10 citations84
US7180133B1Feb 20, 2007
Method and structure for addressing hot carrier degradation in high voltage devices
NAT SEMICONDUCTOR CORP10 citations84
US7105373B1Sep 12, 2006
Vertical photodiode with heavily-doped regions of alternating conductivity types
NAT SEMICONDUCTOR CORP15 citations84
US7027278B1Apr 11, 2006
Stacked high-voltage ESD protection clamp with triggering voltage circuit control
NAT SEMICONDUCTOR CORP11 citations84
US6946690B1Sep 20, 2005
High holding voltage ESD protection structure and method
NAT SEMICONDUCTOR CORP13 citations84
US6947331B1Sep 20, 2005
Method of erasing an EEPROM cell utilizing a frequency/time domain based erased signal
NAT SEMICONDUCTOR CORP15 citations84
US6894881B1May 17, 2005
ESD protection methods and devices using additional terminal in the diode structures
NAT SEMICONDUCTOR CORP13 citations84
US6822294B1Nov 23, 2004
High holding voltage LVTSCR
NAT SEMICONDUCTOR CORP14 citations84
US6815732B1Nov 9, 2004
High-voltage silicon controlled rectifier structure
NAT SEMICONDUCTOR CORP13 citations84
US6720624B1Apr 13, 2004
LVTSCR-like structure with internal emitter injection control
NAT SEMICONDUCTOR CORP14 citations84
US6559507B1May 6, 2003
Compact ballasting region design for snapback N-MOS ESD protection structure using multiple local N+ region blocking
NAT SEMICONDUCTOR CORP13 citations84
VASHCHENKO VLADISLAV
2 patentsEASTMAN KODAK CO
1 patentShowing the top 50 of 150 patents by PatentIndex Score.