Inventor
CHOI KYUNG-IN
KR34 patents
⚠️ This page may combine multiple inventors who share the name “CHOI KYUNG-IN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
29 patentsUS6815285B2Nov 9, 2004
Methods of forming dual gate semiconductor devices having a metal nitride layer
SAMSUNG ELECTRONICS CO LTD147 citations99
US7081409B2Jul 25, 2006
Methods of producing integrated circuit devices utilizing tantalum amine derivatives
SAMSUNG ELECTRONICS CO LTD50 citations96
US7148100B2Dec 12, 2006
Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers
SAMSUNG ELECTRONICS CO LTD30 citations93
US7098131B2Aug 29, 2006
Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
SAMSUNG ELECTRONICS CO LTD48 citations92
US9853111B2Dec 26, 2017
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations84
US7833855B2Nov 16, 2010
Methods of producing integrated circuit devices utilizing tantalum amine derivatives
SAMSUNG ELECTRONICS CO LTD10 citations84
US7470612B2Dec 30, 2008
Method of forming metal wiring layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD13 citations84
US7452811B2Nov 18, 2008
Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7244645B2Jul 17, 2007
Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers and related structures
SAMSUNG ELECTRONICS CO LTD10 citations84
US7067420B2Jun 27, 2006
Methods for forming a metal layer on a semiconductor
SAMSUNG ELECTRONICS CO LTD12 citations84
US7189641B2Mar 13, 2007
Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layers
SAMSUNG ELECTRONICS CO LTD8 citations74
US10593557B2Mar 17, 2020
Methods of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9390977B2Jul 12, 2016
Method for manufacturing a fin=shaped field effect transistor capable of reducing a threshold voltage variation
SAMSUNG ELECTRONICS CO LTD5 citations73
US7105444B2Sep 12, 2006
Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US8053374B2Nov 8, 2011
Method of manufacturing a metal wiring structure
SAMSUNG ELECTRONICS CO LTD3 citations63
US7816255B2Oct 19, 2010
Methods of forming a semiconductor device including a diffusion barrier film
SAMSUNG ELECTRONICS CO LTD6 citations63
US7807571B2Oct 5, 2010
Semiconductor device and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US6876078B2Apr 5, 2005
Semiconductor interconnection structure with TaN and method of forming the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7541282B2Jun 2, 2009
Methods of forming metal-nitride layers in contact holes
SAMSUNG ELECTRONICS CO LTD2 citations62
US11735663B2Aug 22, 2023
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11233150B2Jan 25, 2022
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12080796B2Sep 3, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations56
US9812559B2Nov 7, 2017
FINFET semiconductor devices and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10164017B2Dec 25, 2018
Method of forming a semiconductor device having impurity region
SAMSUNG ELECTRONICS CO LTD0 citations51
US10141427B2Nov 27, 2018
Methods of manufacturing semiconductor devices including gate pattern, multi-channel active pattern and diffusion layer
SAMSUNG ELECTRONICS CO LTD0 citations51
US9911809B2Mar 6, 2018
Semiconductor device having impurity region
SAMSUNG ELECTRONICS CO LTD1 citations51
US7759248B2Jul 20, 2010
Semiconductor memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US12512315B2Dec 30, 2025
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations50
US12230630B2Feb 18, 2025
Semiconductor devices having highly integrated sheet and wire patterns therein
SAMSUNG ELECTRONICS CO LTD0 citations48
CHOI KYUNG-IN
3 patentsUS8304343B2Nov 6, 2012
Method of manufacturing a metal wiring structure
CHOI KYUNG-IN6 citations83
US9401428B2Jul 26, 2016
Semiconductor devices including gate pattern, multi-channel active pattern and diffusion layer
CHOI KYUNG-IN3 citations71
US8124524B2Feb 28, 2012
Methods of forming metal interconnection structures
CHOI KYUNG-IN5 citations61