P

Inventor

CHOI KYUNG-IN

KR34 patents
⚠️ This page may combine multiple inventors who share the name “CHOI KYUNG-IN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

29 patents
US6815285B2Nov 9, 2004

Methods of forming dual gate semiconductor devices having a metal nitride layer

SAMSUNG ELECTRONICS CO LTD147 citations99
US7081409B2Jul 25, 2006

Methods of producing integrated circuit devices utilizing tantalum amine derivatives

SAMSUNG ELECTRONICS CO LTD50 citations96
US7148100B2Dec 12, 2006

Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers

SAMSUNG ELECTRONICS CO LTD30 citations93
US7098131B2Aug 29, 2006

Methods for forming atomic layers and thin films including tantalum nitride and devices including the same

SAMSUNG ELECTRONICS CO LTD48 citations92
US9853111B2Dec 26, 2017

Method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations84
US7833855B2Nov 16, 2010

Methods of producing integrated circuit devices utilizing tantalum amine derivatives

SAMSUNG ELECTRONICS CO LTD10 citations84
US7470612B2Dec 30, 2008

Method of forming metal wiring layer of semiconductor device

SAMSUNG ELECTRONICS CO LTD13 citations84
US7452811B2Nov 18, 2008

Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7244645B2Jul 17, 2007

Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers and related structures

SAMSUNG ELECTRONICS CO LTD10 citations84
US7067420B2Jun 27, 2006

Methods for forming a metal layer on a semiconductor

SAMSUNG ELECTRONICS CO LTD12 citations84
US7189641B2Mar 13, 2007

Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layers

SAMSUNG ELECTRONICS CO LTD8 citations74
US10593557B2Mar 17, 2020

Methods of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations73
US9390977B2Jul 12, 2016

Method for manufacturing a fin=shaped field effect transistor capable of reducing a threshold voltage variation

SAMSUNG ELECTRONICS CO LTD5 citations73
US7105444B2Sep 12, 2006

Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US8053374B2Nov 8, 2011

Method of manufacturing a metal wiring structure

SAMSUNG ELECTRONICS CO LTD3 citations63
US7816255B2Oct 19, 2010

Methods of forming a semiconductor device including a diffusion barrier film

SAMSUNG ELECTRONICS CO LTD6 citations63
US7807571B2Oct 5, 2010

Semiconductor device and methods of forming the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US6876078B2Apr 5, 2005

Semiconductor interconnection structure with TaN and method of forming the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7541282B2Jun 2, 2009

Methods of forming metal-nitride layers in contact holes

SAMSUNG ELECTRONICS CO LTD2 citations62
US11735663B2Aug 22, 2023

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11233150B2Jan 25, 2022

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12080796B2Sep 3, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations56
US9812559B2Nov 7, 2017

FINFET semiconductor devices and method of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US10164017B2Dec 25, 2018

Method of forming a semiconductor device having impurity region

SAMSUNG ELECTRONICS CO LTD0 citations51
US10141427B2Nov 27, 2018

Methods of manufacturing semiconductor devices including gate pattern, multi-channel active pattern and diffusion layer

SAMSUNG ELECTRONICS CO LTD0 citations51
US9911809B2Mar 6, 2018

Semiconductor device having impurity region

SAMSUNG ELECTRONICS CO LTD1 citations51
US7759248B2Jul 20, 2010

Semiconductor memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations51
US12512315B2Dec 30, 2025

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations50
US12230630B2Feb 18, 2025

Semiconductor devices having highly integrated sheet and wire patterns therein

SAMSUNG ELECTRONICS CO LTD0 citations48

CHOI KYUNG-IN

3 patents

LEE JONG-MYEONG

1 patent

CHOI SEONG PIL

1 patent