Inventor

PARK SEONG-GEON

KR19 patents

⚠️ This page may combine multiple inventors who share the name “PARK SEONG-GEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK SEONG-GEON

SAMSUNG ELECTRONICS CO LTD

Methods of producing integrated circuit devices utilizing tantalum amine derivatives

Methods for forming atomic layers and thin films including tantalum nitride and devices including the same

Methods of producing integrated circuit devices utilizing tantalum amine derivatives

Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same

Variable resistance memory device and method of manufacturing the same

Variable resistance memory device and method of manufacturing the same

Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layer

Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same

Semiconductor devices having metal containing N-type and P-type gate electrodes and methods of forming the same

Semiconductor devices having transistors with different gate structures and methods of fabricating the same

Method of forming semiconductor devices having threshold switching devices

Method of manufacturing a semiconductor device using a two-step deposition process

Variable resistance memory device and method of manufacturing the same

Methods of fabricating semiconductor devices having transistors with different gate structures

Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed

Semiconductor device

Methods of forming semiconductor devices having threshold switching devices

Nonvolatile memory cell and nonvolatile memory device including the same

JU HYUN-SU

Nonvolatile stacked memory structure with a resistance change film between a vertical electrode and horizontal electrodes