Inventor
ODA KATSUYA
JP24 patents
⚠️ This page may combine multiple inventors who share the name “ODA KATSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
13 patentsUS7095043B2Aug 22, 2006
Semiconductor device, semiconductor circuit module and manufacturing method of the same
HITACHI LTD83 citations98
US5962880AOct 5, 1999
Heterojunction bipolar transistor
HITACHI LTD154 citations98
US6482710B2Nov 19, 2002
Bipolar transistor and manufacting method thereof
HITACHI LTD47 citations95
US6667489B2Dec 23, 2003
Heterojunction bipolar transistor and method for production thereof
HITACHI LTD53 citations92
US6521974B1Feb 18, 2003
Bipolar transistor and manufacturing method thereof
HITACHI LTD35 citations92
US6388307B1May 14, 2002
Bipolar transistor
HITACHI LTD30 citations92
US6600178B1Jul 29, 2003
Heterojunction bipolar transistor
HITACHI LTD19 citations91
US7368763B2May 6, 2008
Semiconductor device and manufacturing method thereof
HITACHI LTD14 citations84
US6469367B2Oct 22, 2002
Bipolar transistor
HITACHI LTD11 citations74
US9052449B2Jun 9, 2015
Light emitting device, manufacturing method thereof, and optical transceiver
HITACHI LTD6 citations71
US8350301B2Jan 8, 2013
Semiconductor photodiode device and manufacturing method thereof
HITACHI LTD2 citations62
US6653715B2Nov 25, 2003
Bipolar transistor
HITACHI LTD0 citations52
US7863162B2Jan 4, 2011
Semiconductor device and manufacturing method thereof
HITACHI LTD0 citations42
RENESAS TECH CORP
4 patentsUS6724019B2Apr 20, 2004
Multi-layered, single crystal field effect transistor
RENESAS TECH CORP109 citations98
US6995054B2Feb 7, 2006
Method of manufacturing a semiconductor device
RENESAS TECH CORP34 citations92
US6905972B2Jun 14, 2005
Semiconductor device and method for manufacturing the same
RENESAS TECH CORP28 citations92
US7521734B2Apr 21, 2009
Semiconductor device with reduced base resistance
RENESAS TECH CORP5 citations62