Inventor
WASHIO KATSUYOSHI
JP48 patents
⚠️ This page may combine multiple inventors who share the name “WASHIO KATSUYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
32 patentsUS7095043B2Aug 22, 2006
Semiconductor device, semiconductor circuit module and manufacturing method of the same
HITACHI LTD83 citations98
US5962880AOct 5, 1999
Heterojunction bipolar transistor
HITACHI LTD154 citations98
US6004865ADec 21, 1999
Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator
HITACHI LTD45 citations96
US5523602AJun 4, 1996
Multi-layered structure having single crystalline semiconductor film formed on insulator
HITACHI LTD61 citations96
US6482710B2Nov 19, 2002
Bipolar transistor and manufacting method thereof
HITACHI LTD47 citations95
US6723541B2Apr 20, 2004
Method of producing semiconductor device and semiconductor substrate
HITACHI LTD46 citations93
US5598015AJan 28, 1997
Hetero-junction bipolar transistor and semiconductor devices using the same
HITACHI LTD20 citations93
US6667489B2Dec 23, 2003
Heterojunction bipolar transistor and method for production thereof
HITACHI LTD53 citations92
US6521974B1Feb 18, 2003
Bipolar transistor and manufacturing method thereof
HITACHI LTD35 citations92
US6472753B2Oct 29, 2002
BICMOS semiconductor integrated circuit device and fabrication process thereof
HITACHI LTD14 citations92
US6388307B1May 14, 2002
Bipolar transistor
HITACHI LTD30 citations92
US6313012B1Nov 6, 2001
Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator
HITACHI LTD30 citations92
US6304357B1Oct 16, 2001
Optical receiver
HITACHI LTD43 citations92
US6785477B1Aug 31, 2004
Optical receiver using variable negative-capacitance circuit
HITACHI LTD21 citations91
US6600178B1Jul 29, 2003
Heterojunction bipolar transistor
HITACHI LTD19 citations91
US7368763B2May 6, 2008
Semiconductor device and manufacturing method thereof
HITACHI LTD14 citations84
US6658217B2Dec 2, 2003
Optical receiver
HITACHI LTD16 citations83
US6815822B2Nov 9, 2004
BICMOS semiconductor integrated circuit device and fabrication process thereof
HITACHI LTD8 citations74
US6501153B2Dec 31, 2002
Semiconductor device and drive circuit using the semiconductor devices
HITACHI LTD12 citations74
US6476450B2Nov 5, 2002
BICMOS semiconductor integrated circuit device and fabrication process thereof
HITACHI LTD12 citations74
US6469367B2Oct 22, 2002
Bipolar transistor
HITACHI LTD11 citations74
US5430317AJul 4, 1995
Semiconductor device
HITACHI LTD10 citations74
US5424575AJun 13, 1995
Semiconductor device for SOI structure having lead conductor suitable for fine patterning
HITACHI LTD7 citations74
US4949151AAug 14, 1990
Bipolar transistor having side wall base and collector contacts
HITACHI LTD12 citations74
US4887145ADec 12, 1989
Semiconductor device in which electrodes are formed in a self-aligned manner
HITACHI LTD18 citations74
US5324983AJun 28, 1994
Semiconductor device
HITACHI LTD10 citations73
US5237200AAug 17, 1993
Semiconductor bipolar transistor with concentric regions
HITACHI LTD13 citations73
US5109263AApr 28, 1992
Semiconductor device with optimal distance between emitter and trench isolation
HITACHI LTD11 citations73
US4694321ASep 15, 1987
Semiconductor device having bipolar transistor and integrated injection logic
HITACHI LTD8 citations71
US7842973B2Nov 30, 2010
Semiconductor device and manufacturing method of the same
HITACHI LTD2 citations63
US7214973B2May 8, 2007
Semiconductor device and method of manufacturing the same
HITACHI LTD4 citations63
US6653715B2Nov 25, 2003
Bipolar transistor
HITACHI LTD0 citations52
RENESAS TECH CORP
9 patentsUS6936875B2Aug 30, 2005
Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same
RENESAS TECH CORP99 citations98
US6724019B2Apr 20, 2004
Multi-layered, single crystal field effect transistor
RENESAS TECH CORP109 citations98
US6987983B2Jan 17, 2006
Radio frequency monolithic integrated circuit and method for manufacturing the same
RENESAS TECH CORP19 citations93
US6995054B2Feb 7, 2006
Method of manufacturing a semiconductor device
RENESAS TECH CORP34 citations92
US7071500B2Jul 4, 2006
Semiconductor device and manufacturing method for the same
RENESAS TECH CORP19 citations84
US7098740B2Aug 29, 2006
Radio frequency power amplifier and communication system
RENESAS TECH CORP10 citations74
US7045412B2May 16, 2006
Field-effect type semiconductor device for power amplifier
RENESAS TECH CORP9 citations74
US6815707B2Nov 9, 2004
Field-effect type semiconductor device for power amplifier
RENESAS TECH CORP8 citations74
US7521734B2Apr 21, 2009
Semiconductor device with reduced base resistance
RENESAS TECH CORP5 citations62