Inventor
SEIDL HARALD
DE43 patents
⚠️ This page may combine multiple inventors who share the name “SEIDL HARALD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
34 patentsUS6835417B2Dec 28, 2004
Method and device for depositing thin layers via ALD/CVD processes in combination with rapid thermal processes
INFINEON TECHNOLOGIES AG115 citations98
US7317201B2Jan 8, 2008
Method of producing a microelectronic electrode structure, and microelectronic electrode structure
INFINEON TECHNOLOGIES AG43 citations93
US6853023B2Feb 8, 2005
Semiconductor memory cell configuration and a method for producing the configuration
INFINEON TECHNOLOGIES AG42 citations92
US6620724B1Sep 16, 2003
Low resistivity deep trench fill for DRAM and EDRAM applications
INFINEON TECHNOLOGIES AG23 citations92
US6693016B2Feb 17, 2004
Method of fabricating a trench-structure capacitor device
INFINEON TECHNOLOGIES AG21 citations91
US7420199B2Sep 2, 2008
Resistivity changing memory cell having nanowire electrode
INFINEON TECHNOLOGIES AG40 citations89
US7626190B2Dec 1, 2009
Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device
INFINEON TECHNOLOGIES AG8 citations84
US7605090B2Oct 20, 2009
Process for producing sublithographic structures
INFINEON TECHNOLOGIES AG11 citations84
US7303970B2Dec 4, 2007
Method of fabricating dielectric mixed layers and capacitive element and use thereof
INFINEON TECHNOLOGIES AG12 citations84
US7138677B2Nov 21, 2006
Capacitor arrangement with capacitors arranged one in the other
INFINEON TECHNOLOGIES AG17 citations84
US6953722B2Oct 11, 2005
Method for patterning ceramic layers
INFINEON TECHNOLOGIES AG16 citations83
US7170125B2Jan 30, 2007
Capacitor with electrodes made of ruthenium and method for patterning layers made of ruthenium or ruthenium
INFINEON TECHNOLOGIES AG8 citations74
US7157371B2Jan 2, 2007
Barrier layer and a method for suppressing diffusion processes during the production of semiconductor devices
INFINEON TECHNOLOGIES AG9 citations74
US7112487B2Sep 26, 2006
Method for fabricating a stacked capacitor array having a regular arrangement of a plurality of stacked capacitors
INFINEON TECHNOLOGIES AG10 citations74
US7087485B2Aug 8, 2006
Method of fabricating an oxide collar for a trench capacitor
INFINEON TECHNOLOGIES AG7 citations74
US7084454B2Aug 1, 2006
Nonvolatile integrated semiconductor memory
INFINEON TECHNOLOGIES AG9 citations74
US7074689B2Jul 11, 2006
Method for fabricating a trench capacitor having an insulation collar, which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cell
INFINEON TECHNOLOGIES AG7 citations74
US6949269B2Sep 27, 2005
Method for producing vertical patterned layers made of silicon dioxide
INFINEON TECHNOLOGIES AG10 citations74
US6774005B2Aug 10, 2004
Method for fabricating a metal carbide layer and method for fabricating a trench capacitor containing a metal carbide
INFINEON TECHNOLOGIES AG9 citations73
US7998858B2Aug 16, 2011
Vertical interconnect structure, memory device and associated production method
INFINEON TECHNOLOGIES AG1 citations63
US7273790B2Sep 25, 2007
Method for fabricating trench capacitor with insulation collar electrically connected to substrate through buried contact, in particular, for a semiconductor memory cell
INFINEON TECHNOLOGIES AG2 citations63
US7195973B2Mar 27, 2007
Method for fabricating a trench capacitor with an insulation collar and corresponding trench capacitor
INFINEON TECHNOLOGIES AG5 citations63
US7186607B2Mar 6, 2007
Charge-trapping memory device and method for production
INFINEON TECHNOLOGIES AG2 citations63
US7176514B2Feb 13, 2007
Method and configuration for reinforcement of a dielectric layer at defects by self-aligning and self-limiting electrochemical conversion of a substrate material
INFINEON TECHNOLOGIES AG2 citations63
US6916704B2Jul 12, 2005
Multiple deposition of metal layers for the fabrication of an upper capacitor electrode of a trench capacitor
INFINEON TECHNOLOGIES AG6 citations63
US7456461B2Nov 25, 2008
Stacked capacitor array and fabrication method for a stacked capacitor array
INFINEON TECHNOLOGIES AG2 citations62
US6977405B2Dec 20, 2005
Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating it
INFINEON TECHNOLOGIES AG2 citations61
US9123829B2Sep 1, 2015
Method for producing chip stacks
INFINEON TECHNOLOGIES AG1 citations52
US7978504B2Jul 12, 2011
Floating gate device with graphite floating gate
INFINEON TECHNOLOGIES AG0 citations52
US7312115B2Dec 25, 2007
Fabrication method for a semiconductor structure having integrated capacitors
INFINEON TECHNOLOGIES AG0 citations52
US6653185B2Nov 25, 2003
Method of providing trench walls by using two-step etching processes
INFINEON TECHNOLOGIES AG1 citations52
US9040354B2May 26, 2015
Chip comprising a fill structure
INFINEON TECHNOLOGIES AG0 citations50
US7316951B2Jan 8, 2008
Fabrication method for a trench capacitor having an insulation collar
INFINEON TECHNOLOGIES AG0 citations42
US7122423B2Oct 17, 2006
Method for fabricating a memory cell
INFINEON TECHNOLOGIES AG0 citations42
GUTSCHE MARTIN
3 patentsUS8420526B2Apr 16, 2013
Vertical interconnect structure, memory device and associated production method
GUTSCHE MARTIN6 citations83
US8084190B2Dec 27, 2011
Process for producing sublithographic structures
GUTSCHE MARTIN13 citations83
US9177995B2Nov 3, 2015
Vertical interconnect structure, memory device and associated production method
GUTSCHE MARTIN0 citations51