P

Inventor

SEIDL HARALD

DE43 patents
⚠️ This page may combine multiple inventors who share the name “SEIDL HARALD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

34 patents
US6835417B2Dec 28, 2004

Method and device for depositing thin layers via ALD/CVD processes in combination with rapid thermal processes

INFINEON TECHNOLOGIES AG115 citations98
US7317201B2Jan 8, 2008

Method of producing a microelectronic electrode structure, and microelectronic electrode structure

INFINEON TECHNOLOGIES AG43 citations93
US6853023B2Feb 8, 2005

Semiconductor memory cell configuration and a method for producing the configuration

INFINEON TECHNOLOGIES AG42 citations92
US6620724B1Sep 16, 2003

Low resistivity deep trench fill for DRAM and EDRAM applications

INFINEON TECHNOLOGIES AG23 citations92
US6693016B2Feb 17, 2004

Method of fabricating a trench-structure capacitor device

INFINEON TECHNOLOGIES AG21 citations91
US7420199B2Sep 2, 2008

Resistivity changing memory cell having nanowire electrode

INFINEON TECHNOLOGIES AG40 citations89
US7626190B2Dec 1, 2009

Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device

INFINEON TECHNOLOGIES AG8 citations84
US7605090B2Oct 20, 2009

Process for producing sublithographic structures

INFINEON TECHNOLOGIES AG11 citations84
US7303970B2Dec 4, 2007

Method of fabricating dielectric mixed layers and capacitive element and use thereof

INFINEON TECHNOLOGIES AG12 citations84
US7138677B2Nov 21, 2006

Capacitor arrangement with capacitors arranged one in the other

INFINEON TECHNOLOGIES AG17 citations84
US6953722B2Oct 11, 2005

Method for patterning ceramic layers

INFINEON TECHNOLOGIES AG16 citations83
US7170125B2Jan 30, 2007

Capacitor with electrodes made of ruthenium and method for patterning layers made of ruthenium or ruthenium

INFINEON TECHNOLOGIES AG8 citations74
US7157371B2Jan 2, 2007

Barrier layer and a method for suppressing diffusion processes during the production of semiconductor devices

INFINEON TECHNOLOGIES AG9 citations74
US7112487B2Sep 26, 2006

Method for fabricating a stacked capacitor array having a regular arrangement of a plurality of stacked capacitors

INFINEON TECHNOLOGIES AG10 citations74
US7087485B2Aug 8, 2006

Method of fabricating an oxide collar for a trench capacitor

INFINEON TECHNOLOGIES AG7 citations74
US7084454B2Aug 1, 2006

Nonvolatile integrated semiconductor memory

INFINEON TECHNOLOGIES AG9 citations74
US7074689B2Jul 11, 2006

Method for fabricating a trench capacitor having an insulation collar, which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cell

INFINEON TECHNOLOGIES AG7 citations74
US6949269B2Sep 27, 2005

Method for producing vertical patterned layers made of silicon dioxide

INFINEON TECHNOLOGIES AG10 citations74
US6774005B2Aug 10, 2004

Method for fabricating a metal carbide layer and method for fabricating a trench capacitor containing a metal carbide

INFINEON TECHNOLOGIES AG9 citations73
US7998858B2Aug 16, 2011

Vertical interconnect structure, memory device and associated production method

INFINEON TECHNOLOGIES AG1 citations63
US7273790B2Sep 25, 2007

Method for fabricating trench capacitor with insulation collar electrically connected to substrate through buried contact, in particular, for a semiconductor memory cell

INFINEON TECHNOLOGIES AG2 citations63
US7195973B2Mar 27, 2007

Method for fabricating a trench capacitor with an insulation collar and corresponding trench capacitor

INFINEON TECHNOLOGIES AG5 citations63
US7186607B2Mar 6, 2007

Charge-trapping memory device and method for production

INFINEON TECHNOLOGIES AG2 citations63
US7176514B2Feb 13, 2007

Method and configuration for reinforcement of a dielectric layer at defects by self-aligning and self-limiting electrochemical conversion of a substrate material

INFINEON TECHNOLOGIES AG2 citations63
US6916704B2Jul 12, 2005

Multiple deposition of metal layers for the fabrication of an upper capacitor electrode of a trench capacitor

INFINEON TECHNOLOGIES AG6 citations63
US7456461B2Nov 25, 2008

Stacked capacitor array and fabrication method for a stacked capacitor array

INFINEON TECHNOLOGIES AG2 citations62
US6977405B2Dec 20, 2005

Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating it

INFINEON TECHNOLOGIES AG2 citations61
US9123829B2Sep 1, 2015

Method for producing chip stacks

INFINEON TECHNOLOGIES AG1 citations52
US7978504B2Jul 12, 2011

Floating gate device with graphite floating gate

INFINEON TECHNOLOGIES AG0 citations52
US7312115B2Dec 25, 2007

Fabrication method for a semiconductor structure having integrated capacitors

INFINEON TECHNOLOGIES AG0 citations52
US6653185B2Nov 25, 2003

Method of providing trench walls by using two-step etching processes

INFINEON TECHNOLOGIES AG1 citations52
US9040354B2May 26, 2015

Chip comprising a fill structure

INFINEON TECHNOLOGIES AG0 citations50
US7316951B2Jan 8, 2008

Fabrication method for a trench capacitor having an insulation collar

INFINEON TECHNOLOGIES AG0 citations42
US7122423B2Oct 17, 2006

Method for fabricating a memory cell

INFINEON TECHNOLOGIES AG0 citations42

GUTSCHE MARTIN

3 patents

QIMONDA AG

2 patents

BARTH HANS-JOACHIM

1 patent

KAKOSCHKE RONALD

1 patent

SEIDL HARALD

1 patent

MACKH GUNTHER

1 patent