Inventor
SHAN HONGQING
US25 patents
⚠️ This page may combine multiple inventors who share the name “SHAN HONGQING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
15 patentsUS6602434B1Aug 5, 2003
Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
APPLIED MATERIALS INC280 citations98
US7316761B2Jan 8, 2008
Apparatus for uniformly etching a dielectric layer
APPLIED MATERIALS INC178 citations97
US6387287B1May 14, 2002
Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
APPLIED MATERIALS INC94 citations97
US6451703B1Sep 17, 2002
Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
APPLIED MATERIALS INC96 citations96
US6232236B1May 15, 2001
Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system
APPLIED MATERIALS INC134 citations96
US6669858B2Dec 30, 2003
Integrated low k dielectrics and etch stops
APPLIED MATERIALS INC47 citations95
US6440864B1Aug 27, 2002
Substrate cleaning process
APPLIED MATERIALS INC119 citations95
US6521082B1Feb 18, 2003
Magnetically enhanced plasma apparatus and method with enhanced plasma uniformity and enhanced ion energy control
APPLIED MATERIALS INC28 citations93
US6362109B1Mar 26, 2002
Oxide/nitride etching having high selectivity to photoresist
APPLIED MATERIALS INC73 citations93
US7227244B2Jun 5, 2007
Integrated low k dielectrics and etch stops
APPLIED MATERIALS INC27 citations92
US6913652B2Jul 5, 2005
Gas flow division in a wafer processing system having multiple chambers
APPLIED MATERIALS INC32 citations92
US6831742B1Dec 14, 2004
Monitoring substrate processing using reflected radiation
APPLIED MATERIALS INC17 citations92
US6613689B2Sep 2, 2003
Magnetically enhanced plasma oxide etch using hexafluorobutadiene
APPLIED MATERIALS INC38 citations91
US6686293B2Feb 3, 2004
Method of etching a trench in a silicon-containing dielectric material
APPLIED MATERIALS INC18 citations80
US6905624B2Jun 14, 2005
Interferometric endpoint detection in a substrate etching process
APPLIED MATERIALS INC6 citations60
(unassigned)
5 patentsUS6797189B2Sep 28, 2004
Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
217 citations97
US6829056B1Dec 7, 2004
Monitoring dimensions of features at different locations in the processing of substrates
107 citations96
US6849193B2Feb 1, 2005
Highly selective process for etching oxide over nitride using hexafluorobutadiene
23 citations92
US6863835B1Mar 8, 2005
Magnetic barrier for plasma in chamber exhaust
10 citations73
US6773544B2Aug 10, 2004
Magnetic barrier for plasma in chamber exhaust
5 citations73