Inventor
YIN GERALD
US26 patents
⚠️ This page may combine multiple inventors who share the name “YIN GERALD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
17 patentsUS6340435B1Jan 22, 2002
Integrated low K dielectrics and etch stops
APPLIED MATERIALS INC536 citations98
US6074512AJun 13, 2000
Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
APPLIED MATERIALS INC236 citations98
US6858153B2Feb 22, 2005
Integrated low K dielectrics and etch stops
APPLIED MATERIALS INC256 citations97
US6238588B1May 29, 2001
High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
APPLIED MATERIALS INC84 citations97
US6024826AFeb 15, 2000
Plasma reactor with heated source of a polymer-hardening precursor material
APPLIED MATERIALS INC100 citations97
US6352049B1Mar 5, 2002
Plasma assisted processing chamber with separate control of species density
APPLIED MATERIALS INC498 citations96
US5534108AJul 9, 1996
Method and apparatus for altering magnetic coil current to produce etch uniformity in a magnetic field-enhanced plasma reactor
APPLIED MATERIALS INC52 citations96
US6669858B2Dec 30, 2003
Integrated low k dielectrics and etch stops
APPLIED MATERIALS INC47 citations95
US6471822B1Oct 29, 2002
Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma
APPLIED MATERIALS INC88 citations95
US6454898B1Sep 24, 2002
Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
APPLIED MATERIALS INC43 citations95
US6071372AJun 6, 2000
RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls
APPLIED MATERIALS INC69 citations95
US6270617B1Aug 7, 2001
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
APPLIED MATERIALS INC48 citations94
US7227244B2Jun 5, 2007
Integrated low k dielectrics and etch stops
APPLIED MATERIALS INC27 citations92
US6488862B1Dec 3, 2002
Etched patterned copper features free from etch process residue
APPLIED MATERIALS INC23 citations92
US6010603AJan 4, 2000
Patterned copper etch for micron and submicron features, using enhanced physical bombardment
APPLIED MATERIALS INC34 citations92
US5990017ANov 23, 1999
Plasma reactor with heated source of a polymer-hardening precursor material
APPLIED MATERIALS INC32 citations92
US6475335B1Nov 5, 2002
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
APPLIED MATERIALS INC18 citations90
ADVANCED MICRO FAB EQUIP INC
3 patentsUS7658800B2Feb 9, 2010
Gas distribution assembly for use in a semiconductor work piece processing reactor
ADVANCED MICRO FAB EQUIP INC28 citations92
US7503996B2Mar 17, 2009
Multiple frequency plasma chamber, switchable RF system, and processes using same
ADVANCED MICRO FAB EQUIP INC33 citations92
US8366829B2Feb 5, 2013
Multi-station decoupled reactive ion etch chamber
ADVANCED MICRO FAB EQUIP INC10 citations83