P

Inventor

YIN GERALD

US26 patents
⚠️ This page may combine multiple inventors who share the name “YIN GERALD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

17 patents
US6340435B1Jan 22, 2002

Integrated low K dielectrics and etch stops

APPLIED MATERIALS INC536 citations98
US6074512AJun 13, 2000

Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners

APPLIED MATERIALS INC236 citations98
US6858153B2Feb 22, 2005

Integrated low K dielectrics and etch stops

APPLIED MATERIALS INC256 citations97
US6238588B1May 29, 2001

High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process

APPLIED MATERIALS INC84 citations97
US6024826AFeb 15, 2000

Plasma reactor with heated source of a polymer-hardening precursor material

APPLIED MATERIALS INC100 citations97
US6352049B1Mar 5, 2002

Plasma assisted processing chamber with separate control of species density

APPLIED MATERIALS INC498 citations96
US5534108AJul 9, 1996

Method and apparatus for altering magnetic coil current to produce etch uniformity in a magnetic field-enhanced plasma reactor

APPLIED MATERIALS INC52 citations96
US6669858B2Dec 30, 2003

Integrated low k dielectrics and etch stops

APPLIED MATERIALS INC47 citations95
US6471822B1Oct 29, 2002

Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma

APPLIED MATERIALS INC88 citations95
US6454898B1Sep 24, 2002

Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners

APPLIED MATERIALS INC43 citations95
US6071372AJun 6, 2000

RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls

APPLIED MATERIALS INC69 citations95
US6270617B1Aug 7, 2001

RF plasma reactor with hybrid conductor and multi-radius dome ceiling

APPLIED MATERIALS INC48 citations94
US7227244B2Jun 5, 2007

Integrated low k dielectrics and etch stops

APPLIED MATERIALS INC27 citations92
US6488862B1Dec 3, 2002

Etched patterned copper features free from etch process residue

APPLIED MATERIALS INC23 citations92
US6010603AJan 4, 2000

Patterned copper etch for micron and submicron features, using enhanced physical bombardment

APPLIED MATERIALS INC34 citations92
US5990017ANov 23, 1999

Plasma reactor with heated source of a polymer-hardening precursor material

APPLIED MATERIALS INC32 citations92
US6475335B1Nov 5, 2002

RF plasma reactor with hybrid conductor and multi-radius dome ceiling

APPLIED MATERIALS INC18 citations90

ADVANCED MICRO FAB EQUIP INC

3 patents

CHEN AIHUA

2 patents

YIN GERALD

2 patents

LAM RES CORP

1 patent

INTEL CORP

1 patent