Inventor
MOGHADAM FARHAD K
US22 patents
⚠️ This page may combine multiple inventors who share the name “MOGHADAM FARHAD K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
17 patentsUS7399388B2Jul 15, 2008
Sequential gas flow oxide deposition technique
APPLIED MATERIALS INC622 citations99
US6593247B1Jul 15, 2003
Method of depositing low k films using an oxidizing plasma
APPLIED MATERIALS INC129 citations99
US6413583B1Jul 2, 2002
Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
APPLIED MATERIALS INC725 citations99
US7081414B2Jul 25, 2006
Deposition-selective etch-deposition process for dielectric film gapfill
APPLIED MATERIALS INC98 citations98
US6958112B2Oct 25, 2005
Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation
APPLIED MATERIALS INC77 citations98
US6340435B1Jan 22, 2002
Integrated low K dielectrics and etch stops
APPLIED MATERIALS INC536 citations98
US6890850B2May 10, 2005
Method of depositing dielectric materials in damascene applications
APPLIED MATERIALS INC92 citations97
US6858153B2Feb 22, 2005
Integrated low K dielectrics and etch stops
APPLIED MATERIALS INC256 citations97
US7097886B2Aug 29, 2006
Deposition process for high aspect ratio trenches
APPLIED MATERIALS INC56 citations96
US6669858B2Dec 30, 2003
Integrated low k dielectrics and etch stops
APPLIED MATERIALS INC47 citations95
US7227244B2Jun 5, 2007
Integrated low k dielectrics and etch stops
APPLIED MATERIALS INC27 citations92
US7160821B2Jan 9, 2007
Method of depositing low k films
APPLIED MATERIALS INC25 citations92
US6806207B2Oct 19, 2004
Method of depositing low K films
APPLIED MATERIALS INC34 citations92
US7514353B2Apr 7, 2009
Contact metallization scheme using a barrier layer over a silicide layer
APPLIED MATERIALS INC37 citations90
US7151053B2Dec 19, 2006
Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications
APPLIED MATERIALS INC8 citations73
US7799698B2Sep 21, 2010
Deposition-selective etch-deposition process for dielectric film gapfill
APPLIED MATERIALS INC4 citations63
US7691753B2Apr 6, 2010
Deposition-selective etch-deposition process for dielectric film gapfill
APPLIED MATERIALS INC3 citations63
INTEL CORP
5 patentsUS5426076AJun 20, 1995
Dielectric deposition and cleaning process for improved gap filling and device planarization
INTEL CORP115 citations98
US5326723AJul 5, 1994
Method for improving stability of tungsten chemical vapor deposition
INTEL CORP146 citations97
US6495470B2Dec 17, 2002
Contact and via fabrication technologies
INTEL CORP18 citations91
US5883436AMar 16, 1999
Contact and via fabrication technologies
INTEL CORP37 citations91
US5389581AFeb 14, 1995
High density TEOS-based film for intermetal dielectrics
INTEL CORP15 citations67