Inventor
HUANG JUDY H
US36 patents
⚠️ This page may combine multiple inventors who share the name “HUANG JUDY H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
23 patentsUS6794311B2Sep 21, 2004
Method and apparatus for treating low k dielectric layers to reduce diffusion
APPLIED MATERIALS INC260 citations99
US6355571B1Mar 12, 2002
Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
APPLIED MATERIALS INC98 citations99
US6187072B1Feb 13, 2001
Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions
APPLIED MATERIALS INC154 citations99
US5908672AJun 1, 1999
Method and apparatus for depositing a planarized passivation layer
APPLIED MATERIALS INC593 citations99
US6340435B1Jan 22, 2002
Integrated low K dielectrics and etch stops
APPLIED MATERIALS INC536 citations98
US5792269AAug 11, 1998
Gas distribution for CVD systems
APPLIED MATERIALS INC164 citations98
US6858153B2Feb 22, 2005
Integrated low K dielectrics and etch stops
APPLIED MATERIALS INC256 citations97
US6562544B1May 13, 2003
Method and apparatus for improving accuracy in photolithographic processing of substrates
APPLIED MATERIALS INC53 citations96
US6517913B1Feb 11, 2003
Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions
APPLIED MATERIALS INC65 citations96
US6209484B1Apr 3, 2001
Method and apparatus for depositing an etch stop layer
APPLIED MATERIALS INC74 citations96
US6156149ADec 5, 2000
In situ deposition of a dielectric oxide layer and anti-reflective coating
APPLIED MATERIALS INC71 citations96
US6127262AOct 3, 2000
Method and apparatus for depositing an etch stop layer
APPLIED MATERIALS INC49 citations96
US5968324AOct 19, 1999
Method and apparatus for depositing antireflective coating
APPLIED MATERIALS INC85 citations96
US6669858B2Dec 30, 2003
Integrated low k dielectrics and etch stops
APPLIED MATERIALS INC47 citations95
US6083852AJul 4, 2000
Method for applying films using reduced deposition rates
APPLIED MATERIALS INC69 citations95
US6974766B1Dec 13, 2005
In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
APPLIED MATERIALS INC31 citations93
US7227244B2Jun 5, 2007
Integrated low k dielectrics and etch stops
APPLIED MATERIALS INC27 citations92
US7070657B1Jul 4, 2006
Method and apparatus for depositing antireflective coating
APPLIED MATERIALS INC24 citations92
US6946401B2Sep 20, 2005
Plasma treatment for copper oxide reduction
APPLIED MATERIALS INC28 citations92
US6324439B1Nov 27, 2001
Method and apparatus for applying films using reduced deposition rates
APPLIED MATERIALS INC37 citations91
US7670945B2Mar 2, 2010
In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
APPLIED MATERIALS INC5 citations74
US7470611B2Dec 30, 2008
In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
APPLIED MATERIALS INC8 citations74
US6700202B2Mar 2, 2004
Semiconductor device having reduced oxidation interface
APPLIED MATERIALS INC8 citations74
NOVELLUS SYSTEMS INC
10 patentsUS7915139B1Mar 29, 2011
CVD flowable gap fill
NOVELLUS SYSTEMS INC807 citations99
US7888233B1Feb 15, 2011
Flowable film dielectric gap fill process
NOVELLUS SYSTEMS INC572 citations99
US7582555B1Sep 1, 2009
CVD flowable gap fill
NOVELLUS SYSTEMS INC605 citations99
US7524735B1Apr 28, 2009
Flowable film dielectric gap fill process
NOVELLUS SYSTEMS INC166 citations99
US7211525B1May 1, 2007
Hydrogen treatment enhanced gap fill
NOVELLUS SYSTEMS INC540 citations96
US8809161B2Aug 19, 2014
Flowable film dielectric gap fill process
NOVELLUS SYSTEMS INC21 citations93
US7482245B1Jan 27, 2009
Stress profile modulation in STI gap fill
NOVELLUS SYSTEMS INC22 citations93
US7727906B1Jun 1, 2010
H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift
NOVELLUS SYSTEMS INC23 citations92
US7344996B1Mar 18, 2008
Helium-based etch process in deposition-etch-deposition gap fill
NOVELLUS SYSTEMS INC22 citations92
US7476621B1Jan 13, 2009
Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
NOVELLUS SYSTEMS INC15 citations84