Inventor

LEE DEOK-HYUNG

KR43 patents

⚠️ This page may combine multiple inventors who share the name “LEE DEOK-HYUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE DEOK-HYUNG

SAMSUNG ELECTRONICS CO LTD

Methods for fabricating fin field effect transistors using a protective layer to reduce etching damage

Multi-structured Si-fin

Semiconductor device having fin transistor and planar transistor and associated methods of manufacture

Fin field effect transistor and method of manufacturing the same

Methods of forming semiconductor devices having buried oxide patterns

Methods of fabricating fin field effect transistors

Methods of fabricating fin field effect transistors having capping insulation layers

FinFET and method of manufacturing the same

Fin-field effect transistors (Fin-FETs) having protection layers

Multi-structured Si-fin and method of manufacture

Methods of fabricating Fin-field effect transistors (Fin-FETs) having protection layers

Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations

Methods of forming integrated circuits with thermal oxide layers on side walls of gate electrodes wherein the source and drain are higher than the gate electrode

Fin field effect transistors with low resistance contact structures

Methods of fabricating MOS transistors having recesses with elevated source/drain regions

Semiconductor memory devices having vertical channel transistors and related methods

Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same

MOS transistors having recesses with elevated source/drain regions

Fin field effect transistors having capping insulation layers

Methods for fabricating integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations

Methods of manufacturing fin type field effect transistors

Fin field effect transistors including epitaxial fins

Finfets having first and second gates of different resistivities

Methods of forming semiconductor devices including fin structures and related devices

Methods of forming double gate electrodes using tunnel and trench

NAND-type flash memory devices including selection transistors with an anti-punchthrough impurity region and methods of fabricating the same

Fin field effect transistor and method of manufacturing the same

Semiconductor device having contact pads and method for manufacturing the same

Methods for fabricating DRAM semiconductor devices including silicon epitaxial and metal silicide layers

Semiconductor devices having gate structures and contact pads that are lower than the gate structures

Low temperature methods of etching semiconductor substrates

Integrated circuit devices having buried insulation layers and methods of forming the same

Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking region

Trench isolation type semiconductor device which prevents a recess from being formed in a field region

Methods of forming semiconductor devices including Fin structures

Trench isolation type semiconductor device which prevents a recess from being formed in a field region and method of fabricating the same

UNIV CALIFORNIA

Method for producing fluorinated diamond-like carbon films

Optically transparent, scratch-resistant, diamond-like carbon coatings

SON YONG-HOON

Methods of fabricating MOS transistors having recesses with elevated source/drain regions

Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same

LEE DONG-KAK

Semiconductor device having impurity doped polycrystalline layer including impurity diffusion prevention layer and dynamic random memory device including the semiconductor device

JEONG SEONG-HOON

Method of forming insulating layer and method of manufacturing transistor using the same

LEE DEOK-HYUNG

Semiconductor devices having polysilicon gate layer patterns and methods of manufacturing the same