Inventor
DAHL CLAUS
DE23 patents
⚠️ This page may combine multiple inventors who share the name “DAHL CLAUS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
14 patentsUS9166039B2Oct 20, 2015
Lateral transistor component and method for producing same
INFINEON TECHNOLOGIES AG12 citations82
US8809952B2Aug 19, 2014
Lateral transistor component and method for producing same
INFINEON TECHNOLOGIES AG9 citations82
US6661701B2Dec 9, 2003
Three-transistor DRAM cell and associated fabrication method
INFINEON TECHNOLOGIES AG8 citations73
US10998279B2May 4, 2021
On-chip integrated cavity resonator
INFINEON TECHNOLOGIES AG3 citations71
US10032893B2Jul 24, 2018
Bipolar transistor
INFINEON TECHNOLOGIES AG2 citations67
US7709339B2May 4, 2010
Method for producing a planar spacer, an associated bipolar transistor and an associated BiCMOS circuit arrangement
INFINEON TECHNOLOGIES AG2 citations62
US6436750B1Aug 20, 2002
Method of fabricating integrated circuits having transistors and further semiconductor elements
INFINEON TECHNOLOGIES AG6 citations62
US7521733B2Apr 21, 2009
Method for manufacturing an integrated circuit and integrated circuit with a bipolar transistor and a hetero bipolar transistor
INFINEON TECHNOLOGIES AG6 citations61
US9219117B2Dec 22, 2015
Semiconductor structure and a method for processing a carrier
INFINEON TECHNOLOGIES AG2 citations60
US10573730B2Feb 25, 2020
Bipolar transistor
INFINEON TECHNOLOGIES AG0 citations51
US11195766B2Dec 7, 2021
Manufacturing a combined semiconductor device
INFINEON TECHNOLOGIES AG0 citations50
US9679963B2Jun 13, 2017
Semiconductor structure and a method for processing a carrier
INFINEON TECHNOLOGIES AG0 citations50
US10354917B2Jul 16, 2019
Method for manufacturing etch stop areas for contacting semiconductor devices
INFINEON TECHNOLOGIES AG0 citations40
US7091083B2Aug 15, 2006
Method for producing a capacitor
INFINEON TECHNOLOGIES AG0 citations39
INFINEON TECHNOLOGIES DRESDEN GMBH
6 patentsUS9312369B2Apr 12, 2016
Bipolar transistor structure and a method of manufacturing a bipolar transistor structure
INFINEON TECHNOLOGIES DRESDEN GMBH5 citations83
US9673294B2Jun 6, 2017
Bipolar transistor structure and a method of manufacturing a bipolar transistor structure
INFINEON TECHNOLOGIES DRESDEN GMBH3 citations72
US10347737B2Jul 9, 2019
Heterojunction bipolar transistor fully self-aligned to diffusion region with strongly minimized substrate parasitics and selective pre-structured epitaxial base link
INFINEON TECHNOLOGIES DRESDEN GMBH1 citations61
US10128358B2Nov 13, 2018
Transistor having a monocrystalline connection
INFINEON TECHNOLOGIES DRESDEN GMBH0 citations51
US9691885B2Jun 27, 2017
Method for manufacturing a transistor
INFINEON TECHNOLOGIES DRESDEN GMBH0 citations51
US9947760B2Apr 17, 2018
Method for manufacturing an emitter for high-speed heterojunction bipolar transistors
INFINEON TECHNOLOGIES DRESDEN GMBH0 citations40