Inventor
CHIEN FEN-REN
TW35 patents
⚠️ This page may combine multiple inventors who share the name “CHIEN FEN-REN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FORMOSA EPITAXY INC
29 patentsUS6841804B1Jan 11, 2005
Device of white light-emitting diode
FORMOSA EPITAXY INC230 citations97
US7307291B2Dec 11, 2007
Gallium-nitride based ultraviolet photo detector
FORMOSA EPITAXY INC24 citations92
US7148519B2Dec 12, 2006
Structure of GaN light-emitting diode
FORMOSA EPITAXY INC24 citations92
US6914264B2Jul 5, 2005
Structure and manufacturing method for GaN light emitting diodes
FORMOSA EPITAXY INC38 citations92
US7173289B1Feb 6, 2007
Light emitting diode structure having photonic crystals
FORMOSA EPITAXY INC44 citations90
US7589350B2Sep 15, 2009
Light-emitting diode chip
FORMOSA EPITAXY INC17 citations83
US7105850B2Sep 12, 2006
GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity
FORMOSA EPITAXY INC13 citations83
US7049638B2May 23, 2006
High-brightness gallium-nitride based light emitting diode structure
FORMOSA EPITAXY INC12 citations83
US7042019B1May 9, 2006
Gallium-nitride based multi-quantum well light-emitting diode n-type contact layer structure
FORMOSA EPITAXY INC12 citations83
US6979835B1Dec 27, 2005
Gallium-nitride based light-emitting diode epitaxial structure
FORMOSA EPITAXY INC18 citations83
US6967346B2Nov 22, 2005
Light emitting diode structure and manufacture method thereof
FORMOSA EPITAXY INC12 citations83
US6753552B1Jun 22, 2004
Growth-selective structure of light-emitting diode
FORMOSA EPITAXY INC13 citations83
US7374958B2May 20, 2008
Light emitting semiconductor bonding structure and method of manufacturing the same
FORMOSA EPITAXY INC8 citations74
US7345321B2Mar 18, 2008
High-brightness gallium-nitride based light emitting diode structure
FORMOSA EPITAXY INC7 citations73
US7180096B2Feb 20, 2007
Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-ESD capability
FORMOSA EPITAXY INC7 citations73
US7180097B2Feb 20, 2007
High-brightness gallium-nitride based light emitting diode structure
FORMOSA EPITAXY INC7 citations73
US9371975B2Jun 21, 2016
Light source device
FORMOSA EPITAXY INC2 citations63
US7442962B2Oct 28, 2008
High-brightness gallium-nitride based light emitting diode structure
FORMOSA EPITAXY INC2 citations62
US7087924B2Aug 8, 2006
Gallium-nitride based light emitting diode structure with enhanced light illuminance
FORMOSA EPITAXY INC6 citations62
US7087922B2Aug 8, 2006
Light-emitting diode structure
FORMOSA EPITAXY INC2 citations62
US7042018B2May 9, 2006
Structure of GaN light-emitting diode
FORMOSA EPITAXY INC2 citations62
US7033949B2Apr 25, 2006
Structure and manufacturing method for nitride-based light-emitting diodes
FORMOSA EPITAXY INC6 citations62
US7473939B2Jan 6, 2009
Light-emitting diode structure with transparent window covering layer of multiple films
FORMOSA EPITAXY INC6 citations61
US7476912B2Jan 13, 2009
Multi-directional light scattering LED and manufacturing method thereof
FORMOSA EPITAXY INC2 citations59
US6248608B1Jun 19, 2001
Manufacturing method of a gallium nitride-based blue light emitting diode (LED) ohmic electrodes
FORMOSA EPITAXY INC3 citations56
US9488321B2Nov 8, 2016
Illumination device with inclined light emitting element disposed on a transparent substrate
FORMOSA EPITAXY INC0 citations52
US7632693B2Dec 15, 2009
Manufacturing method of multi-directional light scattering LED
FORMOSA EPITAXY INC0 citations48
US7763902B2Jul 27, 2010
Light emitting diode chip
FORMOSA EPITAXY INC0 citations41
US7692181B2Apr 6, 2010
Gallium-nitride based light emitting diode light emitting layer structure
FORMOSA EPITAXY INC0 citations41