Inventor

YOO CHA-YOUNG

KR71 patents

⚠️ This page may combine multiple inventors who share the name “YOO CHA-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YOO CHA-YOUNG

SAMSUNG ELECTRONICS CO LTD

Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures

Metal-insulator-metal capacitor

Method of forming a metal-insulator-metal capacitor

Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby

Method for fabricating polysilicon film for semiconductor device

Apparatus for fabricating polysilicon film for semiconductor device

Method of making capacitor of highly integrated semiconductor device using multiple insulation layers

Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions

Method for manufacturing capacitor of semiconductor memory device controlling thermal budget

High capacitance capacitor manufacturing method

Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrode

Methods of forming a semiconductor device including a metal silicide layer between a conductive plug and a bottom electrode of a capacitor

Methods for forming semiconductor devices including thermal processing

Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters

Methods of fabrication integrated circuit capacitors having a dielectric layer between a u-shaped lower electrode and a support layer

Methods for manufacturing storage nodes of stacked capacitors

Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereof

Methods of manufacturing semiconductor devices

Capacitors having composite dielectric layers containing crystallization inhibiting regions

Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same

Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrode

Methods for forming capacitors on semiconductor substrates

Methods for manufacturing semiconductor devices having a metal layer

Methods for manufacturing semiconductor memory devices

Method for forming capacitor of semiconductor device using pre-bake

Methods of forming capacitors including electrodes with hemispherical grained silicon layers on sidewalls thereof and related structures

Methods of forming hemispherical grained silicon (HSG-Si) capacitor structures including protective layers

Methods of forming capacitor electrodes containing HSG semiconductor layers therein

Methods of forming integrated circuits devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate

Nonvolatile semiconductor memory device, a method of fabricating the same, and read, erase write methods of the same

Methods of forming integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions

Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same

Capacitor of semiconductor device and method of fabricating the same

Methods of manufacturing a semiconductor device including a dielectric layer including zirconium

Thin film structure, capacitor, and methods for forming the same

Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby

Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereof

Integrated circuit capacitors having a dielectric layer between a U-shaped lower electrode and a support layer

Capacitors including a cavity containing a buried layer

Methods of forming integrated circuit devices having metal-insulator-metal (MIM) capacitor

Method of fabricating a MIM capacitor using etchback

Integrated circuit devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate

Methods of forming metal-insulator-metal (MIM) capacitors with separate seed

Methods of forming MIM type capacitor structures using low temperature plasma processing

Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed

EUGENE TECHNOLOGY CO LTD

Substrate processing apparatus and method for assembling tube assembly

Substrate processing apparatus

CHUNG BYUNG-HONG

Methods of forming fine patterns for semiconductor device

CHUNG SUK-JIN

Method of forming an oxide layer and method of manufacturing semiconductor device including the oxide layer

SAMSUNG ELECTRONICS CO INC

Method of forming thin ruthenium-containing layer