Inventor
NAKAO YOSHIYUKI
JP29 patents
⚠️ This page may combine multiple inventors who share the name “NAKAO YOSHIYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
8 patentsUS6750541B2Jun 15, 2004
Semiconductor device
FUJITSU LTD47 citations96
US7413977B2Aug 19, 2008
Method of manufacturing semiconductor device suitable for forming wiring using damascene method
FUJITSU LTD17 citations92
US7846833B2Dec 7, 2010
Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor device
FUJITSU LTD7 citations74
US6992005B2Jan 31, 2006
Semiconductor device and method of manufacturing the same
FUJITSU LTD9 citations74
US5667942ASep 16, 1997
Resist pattern forming method
FUJITSU LTD12 citations74
US7256500B2Aug 14, 2007
Semiconductor device using metal nitride as insulating film
FUJITSU LTD6 citations73
US7042093B2May 9, 2006
Semiconductor device using metal nitride as insulating film
FUJITSU LTD7 citations73
US7713869B2May 11, 2010
Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor device
FUJITSU LTD5 citations63
HANEDA MASAKI
3 patentsUS8168532B2May 1, 2012
Method of manufacturing a multilayer interconnection structure in a semiconductor device
HANEDA MASAKI21 citations90
US9559058B2Jan 31, 2017
Semiconductor device and method for manufacturing the same
HANEDA MASAKI0 citations50
US8067836B2Nov 29, 2011
Semiconductor device with reduced increase in copper film resistance
HANEDA MASAKI1 citations50
FUJITSU MICROELECTRONICS LTD
2 patentsUS7507666B2Mar 24, 2009
Manufacture method for semiconductor device having concave portions filled with conductor containing Cu as its main composition
FUJITSU MICROELECTRONICS LTD49 citations92
US7507659B2Mar 24, 2009
Fabrication process of a semiconductor device
FUJITSU MICROELECTRONICS LTD23 citations92