P

Inventor

SONG KI-WHAN

KR64 patents
⚠️ This page may combine multiple inventors who share the name “SONG KI-WHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

38 patents
US7741673B2Jun 22, 2010

Floating body memory and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD226 citations98
US7442988B2Oct 28, 2008

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD50 citations96
US7977736B2Jul 12, 2011

Vertical channel transistors and memory devices including vertical channel transistors

SAMSUNG ELECTRONICS CO LTD48 citations94
US7567452B2Jul 28, 2009

Multi-level dynamic memory device having open bit line structure and method of driving the same

SAMSUNG ELECTRONICS CO LTD24 citations93
US6580184B2Jun 17, 2003

Electrostatic discharge (ESD) protection circuit of silicon-controlled rectifier (SCR) structure operable at a low trigger voltage

SAMSUNG ELECTRONICS CO LTD34 citations93
US6366113B1Apr 2, 2002

Data receiver

SAMSUNG ELECTRONICS CO LTD31 citations93
US6222354B1Apr 24, 2001

Charge compensator for voltage regulator

SAMSUNG ELECTRONICS CO LTD27 citations93
US6184701B1Feb 6, 2001

Integrated circuit devices having metastability protection circuits therein

SAMSUNG ELECTRONICS CO LTD20 citations93
US7564084B2Jul 21, 2009

Dual-gate dynamic random access memory device having vertical channel transistors and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD32 citations92
US6313670B1Nov 6, 2001

Integrated driver circuits having current control capability

SAMSUNG ELECTRONICS CO LTD33 citations92
US8009473B2Aug 30, 2011

Semiconductor memory device including memory cell array having memory cells using floating body transistors

SAMSUNG ELECTRONICS CO LTD10 citations84
US8009488B2Aug 30, 2011

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD10 citations84
US7924644B2Apr 12, 2011

Semiconductor memory device including floating body transistor memory cell array and method of operating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7906397B2Mar 15, 2011

Methods of fabricating nonvolatile semiconductor memory devices including a plurality of stripes having impurity layers therein

SAMSUNG ELECTRONICS CO LTD7 citations84
US7525146B2Apr 28, 2009

Nonvolatile semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD10 citations84
US6384619B1May 7, 2002

Integrated circuit devices having metastability protection circuits therein

SAMSUNG ELECTRONICS CO LTD14 citations84
US7851859B2Dec 14, 2010

Single transistor memory device having source and drain insulating regions and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD17 citations83
US7843750B2Nov 30, 2010

Semiconductor memory device comprising transistor having vertical channel structure

SAMSUNG ELECTRONICS CO LTD6 citations74
US7433223B2Oct 7, 2008

Memory devices including floating body transistor capacitorless memory cells and related methods

SAMSUNG ELECTRONICS CO LTD7 citations74
US10593408B2Mar 17, 2020

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD4 citations72
US10170192B2Jan 1, 2019

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US8982618B2Mar 17, 2015

Nonvolatile memory device and related method of operation

SAMSUNG ELECTRONICS CO LTD2 citations63
US8023337B2Sep 20, 2011

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD3 citations63
US7944759B2May 17, 2011

Semiconductor memory device including floating body transistor

SAMSUNG ELECTRONICS CO LTD4 citations63
US7835208B2Nov 16, 2010

Multi-level dynamic memory device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7709308B2May 4, 2010

Semiconductor devices and methods of fabricating the same including forming a fin with first and second gates on the sidewalls

SAMSUNG ELECTRONICS CO LTD3 citations63
US7675771B2Mar 9, 2010

Capacitor-less DRAM circuit and method of operating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7633096B2Dec 15, 2009

Silicon-controlled rectifier for electrostatic discharge protection circuits and structure thereof

SAMSUNG ELECTRONICS CO LTD5 citations63
US7619928B2Nov 17, 2009

Semiconductor memory device including floating body memory cells and method of operating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7595532B2Sep 29, 2009

Semiconductor memory devices and methods of forming the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7580314B2Aug 25, 2009

Memory device having open bit line structure and method of sensing data therefrom

SAMSUNG ELECTRONICS CO LTD5 citations63
US7577025B2Aug 18, 2009

Semiconductor memory device comprising floating body memory cells and related methods of operation

SAMSUNG ELECTRONICS CO LTD3 citations63
US7548447B2Jun 16, 2009

Semiconductor memory device and methods thereof

SAMSUNG ELECTRONICS CO LTD4 citations63
US7030673B2Apr 18, 2006

Phase splitter circuit

SAMSUNG ELECTRONICS CO LTD3 citations63
US7002242B2Feb 21, 2006

Ball grid array package semiconductor device having improved power line routing

SAMSUNG ELECTRONICS CO LTD3 citations63
US6707653B2Mar 16, 2004

Semiconductor controlled rectifier for use in electrostatic discharge protection circuit

SAMSUNG ELECTRONICS CO LTD2 citations63
US7777999B2Aug 17, 2010

Electrostatic discharge (ESD) protection device

SAMSUNG ELECTRONICS CO LTD5 citations62
US7969808B2Jun 28, 2011

Memory cell structures, memory arrays, memory devices, memory controllers, and memory systems, and methods of manufacturing and operating the same

SAMSUNG ELECTRONICS CO LTD4 citations61

KIM JIN-YOUNG

3 patents

SONG KI-WHAN

2 patents

KWON DUK-MIN

2 patents

PARK DUK-HA

1 patent

KIM KYUNG-RYUN

1 patent

SONG ICK HYUN

1 patent

SAMSUNG ELECTRIC

1 patent

TAK NAM-KYUN

1 patent

Showing the top 50 of 64 patents by PatentIndex Score.