Inventor
SHIOTA ATSUSHI
US28 patents
⚠️ This page may combine multiple inventors who share the name “SHIOTA ATSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
JSR CORP
21 patentsUS6800330B2Oct 5, 2004
Composition for film formation, method of film formation, and silica-based film
JSR CORP43 citations92
US6406794B1Jun 18, 2002
Film-forming composition
JSR CORP32 citations92
US6190833B1Feb 20, 2001
Radiation-sensitive resin composition
JSR CORP48 citations92
US6902771B2Jun 7, 2005
Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
JSR CORP20 citations91
US6410151B1Jun 25, 2002
Composition for film formation, method of film formation, and insulating film
JSR CORP30 citations91
US6410150B1Jun 25, 2002
Composition for film formation, method of film formation, and insulating film
JSR CORP28 citations91
US7399715B2Jul 15, 2008
Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device
JSR CORP30 citations90
US7875317B2Jan 25, 2011
Composition for forming insulating film, method for producing same, silica-based insulating film, and method for forming same
JSR CORP7 citations84
US7528207B2May 5, 2009
Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film
JSR CORP16 citations84
US7514151B2Apr 7, 2009
Insulating film and method for forming the same, and film-forming composition
JSR CORP8 citations84
US6890605B2May 10, 2005
Method of film formation, insulating film, and substrate for semiconductor
JSR CORP19 citations83
US7932295B2Apr 26, 2011
Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device
JSR CORP9 citations82
US7297360B2Nov 20, 2007
Insulation film
JSR CORP14 citations82
US7291567B2Nov 6, 2007
Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device
JSR CORP16 citations82
US7026053B2Apr 11, 2006
Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
JSR CORP15 citations82
US6824833B2Nov 30, 2004
Stacked film, insulating film and substrate for semiconductor
JSR CORP12 citations73
US6787193B2Sep 7, 2004
Method for the formation of silica film, silica film, insulating film, and semiconductor device
JSR CORP3 citations63
US7736748B2Jun 15, 2010
Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same
JSR CORP2 citations62
US7358317B2Apr 15, 2008
Polycarbosilane and method of producing the same
JSR CORP2 citations62
US7608928B2Oct 27, 2009
Laminated body and semiconductor device
JSR CORP3 citations59
US6749944B2Jun 15, 2004
Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor
JSR CORP0 citations41
AKIYAMA MASAHIRO
2 patentsUS8268403B2Sep 18, 2012
Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation
AKIYAMA MASAHIRO11 citations82
US8404786B2Mar 26, 2013
Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same
AKIYAMA MASAHIRO5 citations71