Inventor
ADAMS CHARLOTTE DEWAN
US5 patents
⚠️ This page may combine multiple inventors who share the name “ADAMS CHARLOTTE DEWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
4 patentsUS11515427B2Nov 29, 2022
Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance
IBM4 citations71
US12068415B2Aug 20, 2024
Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance
IBM0 citations61
US11888048B2Jan 30, 2024
Gate oxide for nanosheet transistor devices
IBM0 citations61
US11211474B2Dec 28, 2021
Gate oxide for nanosheet transistor devices
IBM0 citations61