Inventor
HUANG ELBERT E
US70 patents
⚠️ This page may combine multiple inventors who share the name “HUANG ELBERT E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
39 patentsUS9502350B1Nov 22, 2016
Interconnect scaling method including forming dielectric layer over subtractively etched first conductive layer and forming second conductive material on dielectric layer
IBM49 citations98
US9349687B1May 24, 2016
Advanced manganese/manganese nitride cap/etch mask for air gap formation scheme in nanocopper low-K interconnect
IBM96 citations98
US9324650B2Apr 26, 2016
Interconnect structures with fully aligned vias
IBM79 citations98
US9305836B1Apr 5, 2016
Air gap semiconductor structure with selective cap bilayer
IBM488 citations98
US7405147B2Jul 29, 2008
Device and methodology for reducing effective dielectric constant in semiconductor devices
IBM35 citations96
US9685406B1Jun 20, 2017
Selective and non-selective barrier layer wet removal
IBM34 citations94
US9601426B1Mar 21, 2017
Interconnect structure having subtractive etch feature and damascene feature
IBM26 citations94
US7892940B2Feb 22, 2011
Device and methodology for reducing effective dielectric constant in semiconductor devices
IBM11 citations93
US6930034B2Aug 16, 2005
Robust ultra-low k interconnect structures using bridge-then-metallization fabrication sequence
IBM43 citations93
US6803660B1Oct 12, 2004
Patterning layers comprised of spin-on ceramic films
IBM19 citations93
US7365378B2Apr 29, 2008
MOSFET structure with ultra-low K spacer
IBM32 citations92
US10256186B2Apr 9, 2019
Interconnect structure having subtractive etch feature and damascene feature
IBM9 citations84
US10002831B2Jun 19, 2018
Selective and non-selective barrier layer wet removal
IBM7 citations84
US9911690B2Mar 6, 2018
Interconnect structures with fully aligned vias
IBM6 citations84
US9852980B2Dec 26, 2017
Interconnect structure having substractive etch feature and damascene feature
IBM7 citations84
US9806023B1Oct 31, 2017
Selective and non-selective barrier layer wet removal
IBM8 citations84
US9472477B1Oct 18, 2016
Electromigration test structure for Cu barrier integrity and blech effect evaluations
IBM6 citations84
US9064871B2Jun 23, 2015
Vertical electronic fuse
IBM6 citations84
US8871624B2Oct 28, 2014
Sealed air gap for semiconductor chip
IBM8 citations84
US8343868B2Jan 1, 2013
Device and methodology for reducing effective dielectric constant in semiconductor devices
IBM6 citations84
US8030202B1Oct 4, 2011
Temporary etchable liner for forming air gap
IBM13 citations84
US7943480B2May 17, 2011
Sub-lithographic dimensioned air gap formation and related structure
IBM18 citations84
US7326442B2Feb 5, 2008
Antireflective composition and process of making a lithographic structure
IBM11 citations84
US7081673B2Jul 25, 2006
Multilayered cap barrier in microelectronic interconnect structures
IBM12 citations84
US9711455B2Jul 18, 2017
Method of forming an air gap semiconductor structure with selective cap bilayer
IBM5 citations83
US7696542B2Apr 13, 2010
Anisotropic stress generation by stress-generating liners having a sublithographic width
IBM6 citations74
US7592685B2Sep 22, 2009
Device and methodology for reducing effective dielectric constant in semiconductor devices
IBM7 citations74
US7470597B2Dec 30, 2008
Method of fabricating a multilayered dielectric diffusion barrier layer
IBM5 citations74
US7256146B2Aug 14, 2007
Method of forming a ceramic diffusion barrier layer
IBM5 citations74
US7187081B2Mar 6, 2007
Polycarbosilane buried etch stops in interconnect structures
IBM7 citations74
US6940173B2Sep 6, 2005
Interconnect structures incorporating low-k dielectric barrier films
IBM6 citations74
US6929982B2Aug 16, 2005
Patterning layers comprised of spin-on ceramic films
IBM7 citations74
US10276436B2Apr 30, 2019
Selective recessing to form a fully aligned via
IBM2 citations73
US10211153B2Feb 19, 2019
Low aspect ratio interconnect
IBM2 citations73
US10204856B2Feb 12, 2019
Interconnect structures with fully aligned vias
IBM1 citations73
US9881833B1Jan 30, 2018
Barrier planarization for interconnect metallization
IBM6 citations73
US9960117B2May 1, 2018
Air gap semiconductor structure with selective cap bilayer
IBM4 citations72
US9089080B2Jul 21, 2015
Corrugated interfaces for multilayered interconnects
IBM1 citations63
US8828521B2Sep 9, 2014
Corrugated interfaces for multilayered interconnects
IBM2 citations63
EDELSTEIN DANIEL C
6 patentsUS8288268B2Oct 16, 2012
Microelectronic structure including air gap
EDELSTEIN DANIEL C24 citations93
US8129286B2Mar 6, 2012
Reducing effective dielectric constant in semiconductor devices
EDELSTEIN DANIEL C11 citations92
US9105693B2Aug 11, 2015
Microelectronic structure including air gap
EDELSTEIN DANIEL C11 citations84
US8461678B2Jun 11, 2013
Structure with self aligned resist layer on an interconnect surface and method of making same
EDELSTEIN DANIEL C11 citations84
US8227336B2Jul 24, 2012
Structure with self aligned resist layer on an interconnect surface and method of making same
EDELSTEIN DANIEL C6 citations84
US9059251B2Jun 16, 2015
Microelectronic structure including air gap
EDELSTEIN DANIEL C2 citations63
HORAK DAVID V
1 patentBREYTA GREGORY
1 patentGLOBALFOUNDRIES INC
1 patentPONOTH SHOM
1 patentBONILLA GRISELDA
1 patentShowing the top 50 of 70 patents by PatentIndex Score.