Inventor

WORLEDGE DANIEL C

US98 patents

⚠️ This page may combine multiple inventors who share the name “WORLEDGE DANIEL C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WORLEDGE DANIEL C

IBM

Techniques for spin-flop switching with offset field

Scalable magnetic random access memory device

Thermally-assisted spin transfer torque memory with improved bit error rate performance

Spin hall effect MRAM with self-reference read

Otp mram

Nonvolatile memory interface for metadata shadowing

Perpendicular magnetic anisotropy BCC multilayers

Perpendicular magnetic anisotropy BCC multilayers

Spin transfer torque cell for magnetic random access memory

Parallel shunt paths in thermally assisted magnetic memory cells

Spin transfer torque magnetic tunnel junction with off-centered current flow

Magnetic tunnel junction transistor

Techniques for coupling in semiconductor devices and magnetic device using these techniques

In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers

Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention

Spin transfer torque cell for magnetic random access memory

Thin reference layer for STT MRAM

Three terminal spin hall MRAM

Double spin filter tunnel junction

Magnetic field sensor based on topological insulator and insulating coupler materials

Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer

Perpendicular magnetic anisotropy BCC multilayers

In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions

Structure for thermally assisted MRAM

Magnetic exchange coupled MTJ free layer having low switching current and high data retention

Double spin filter tunnel junction

Double spin filter tunnel junction

Double spin filter tunnel junction

Thin reference layer for STT MRAM

Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention

Spin transfer torque cell for magnetic random access memory

Double synthetic antiferromagnet using rare earth metals and transition metals

Current constriction for spin torque MRAM

Thermal spin torqure transfer magnetoresistive random access memory

Magnetoresistive random access memory

Reference cells for spin torque based memory device

Increased magnetic damping for toggle MRAM

Data writing to scalable magnetic memory devices

Techniques for coupling in semiconductor devices

Magnetic tunnel junction transistor

WORLEDGE DANIEL C

Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory

Non-volatile magnetic tunnel junction transistor

Magnetic tunnel junction transistor device

Spin-torque based memory device using a magnesium oxide tunnel barrier

Seed layer and free magnetic layer for perpindicular anisotropy in a spin-torque magnetic random access memory

Read direction for spin-torque based memory device

ABRAHAM DAVID W

Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers

Magnonic magnetic random access memory device

GAIDIS MICHAEL C

Spin transfer torque cell for magnetic random access memory

HU GUOHAN

Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory