Inventor
FUKUTOME HIDENOBU
KR19 patents
⚠️ This page may combine multiple inventors who share the name “FUKUTOME HIDENOBU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU SEMICONDUCTOR LTD
6 patentsUS7989299B2Aug 2, 2011
Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
FUJITSU SEMICONDUCTOR LTD6 citations73
US7898036B2Mar 1, 2011
Semiconductor device and process for manufacturing the same
FUJITSU SEMICONDUCTOR LTD3 citations62
US7977194B2Jul 12, 2011
Method for fabricating semiconductor device with fully silicided gate electrode
FUJITSU SEMICONDUCTOR LTD3 citations59
US9825171B2Nov 21, 2017
Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
FUJITSU SEMICONDUCTOR LTD0 citations51
US9437737B2Sep 6, 2016
Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
FUJITSU SEMICONDUCTOR LTD0 citations51
US8362530B2Jan 29, 2013
Semiconductor device including MISFET and its manufacture method
FUJITSU SEMICONDUCTOR LTD0 citations41
MAEDA SHIGENOBU
4 patentsUS9842909B2Dec 12, 2017
Semiconductor device and fabricating method thereof
MAEDA SHIGENOBU6 citations84
US9240481B2Jan 19, 2016
Semiconductor device having embedded strain-inducing pattern
MAEDA SHIGENOBU8 citations83
US8962435B2Feb 24, 2015
Method of forming semiconductor device having embedded strain-inducing pattern
MAEDA SHIGENOBU5 citations83
US8884298B2Nov 11, 2014
Semiconductor device having embedded strain-inducing pattern and method of forming the same
MAEDA SHIGENOBU11 citations83
FUKUTOME HIDENOBU
4 patentsUS9093529B2Jul 28, 2015
Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
FUKUTOME HIDENOBU2 citations60
US8399345B2Mar 19, 2013
Semiconductor device having nickel silicide layer
FUKUTOME HIDENOBU0 citations49
US9786565B2Oct 10, 2017
Semiconductor device and method of manufacturing the semiconductor device
FUKUTOME HIDENOBU0 citations38
US8546247B2Oct 1, 2013
Manufacturing method of semiconductor device with amorphous silicon layer formation
FUKUTOME HIDENOBU0 citations38
SAMSUNG ELECTRONICS CO LTD
3 patentsUS9276116B2Mar 1, 2016
Semiconductor device and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD21 citations92
US10332878B2Jun 25, 2019
Semiconductor device with impurity-doped region and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US9559101B2Jan 31, 2017
Semiconductor device with impurity-doped region and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51