Inventor

KO YOUNG-GUN

KR28 patents

⚠️ This page may combine multiple inventors who share the name “KO YOUNG-GUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KO YOUNG-GUN

SAMSUNG ELECTRONICS CO LTD

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

MOS transistor with elevated source and drain structures and method of fabrication thereof

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

Semiconductor device having silicon on insulator and fabricating method therefor

Semiconductor device having silicon on insulator and fabricating method therefor

MOS transistor with elevated source and drain structures and method of fabrication thereof

Highly integrated semiconductor device with silicide layer that secures contact margin and method of manufacturing the same

Method of fabricating semiconductor device having L-shaped spacer

Semiconductor transistor using L-shaped spacer and method of fabricating the same

Method of fabricating a semiconductor device having an L-shaped spacer

Semiconductor devices including gates and dummy gates of different materials

Method of fabricating semiconductor device having notched gate

Semiconductor devices including insulating materials in fins

Highly integrated semiconductor device with silicide layer that secures contact margin and method of manufacturing the same

Methods of fabricating MOS field effect transistors with pocket regions using implant blocking patterns

Semiconductor transistor using L-shaped spacer

Semiconductor device having silicon on insulator and fabricating method therefor

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

Semiconductor device having silicon on insulator and fabricating method therefor

Method of manufacturing field effect transistors using sacrificial blocking layers

Devices and methods for constructing electrically programmable integrated fuses for low power applications

Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areas

MAEDA SHIGENOBU

Semiconductor device having embedded strain-inducing pattern

Method of forming semiconductor device having embedded strain-inducing pattern

Semiconductor device having embedded strain-inducing pattern and method of forming the same

IBM

Overlapped stressed liners for improved contacts

Method for improved fabrication of a semiconductor using a stress proximity technique process