Inventor
XUE LEI
CN93 patents
⚠️ This page may combine multiple inventors who share the name “XUE LEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
25 patentsUS11563021B2Jan 24, 2023
Memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD10 citations83
US11302627B1Apr 12, 2022
On-chip capacitors in three-dimensional semiconductor devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD3 citations73
US11716847B2Aug 1, 2023
Three-dimensional NAND memory device with split gates
YANGTZE MEMORY TECH CO LTD2 citations72
US11348936B2May 31, 2022
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD2 citations72
US11094714B2Aug 17, 2021
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD3 citations72
US11955422B2Apr 9, 2024
On-chip capacitors in semiconductor devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations63
US11652042B2May 16, 2023
On-chip capacitors in semiconductor devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations63
US11502099B2Nov 15, 2022
Three-dimensional memory devices with architecture of increased number of bit lines
YANGTZE MEMORY TECH CO LTD0 citations63
US10879263B2Dec 29, 2020
Three-dimensional memory devices with architecture of increased number of bit lines
YANGTZE MEMORY TECH CO LTD1 citations63
US12402309B2Aug 26, 2025
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12185536B2Dec 31, 2024
Three-dimensional memory devices with reduced cell interference and fabrication methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12171098B2Dec 17, 2024
Three-dimensional memory device with improved charge lateral migration and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11538824B2Dec 27, 2022
Three-dimensional memory devices with improved charge confinement and fabrication methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11515329B2Nov 29, 2022
Three-dimensional memory device and manufacturing method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11342352B2May 24, 2022
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11069712B2Jul 20, 2021
Three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12532468B2Jan 20, 2026
Three-dimensional memory devices with channel structures having plum blossom shape
YANGTZE MEMORY TECH CO LTD0 citations61
US12052865B2Jul 30, 2024
Three-dimensional memory devices with channel structures having plum blossom shape and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations61
US11925019B2Mar 5, 2024
Channel structures having protruding portions in three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations61
US12063784B2Aug 13, 2024
Memory peripheral circuit having three-dimensional transistors and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations60
US11751385B2Sep 5, 2023
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations60
US12568624B2Mar 3, 2026
Memory device containing TSG deck and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations59
US12581649B2Mar 17, 2026
Semiconductor device, fabrication method, and memory system
YANGTZE MEMORY TECH CO LTD0 citations58
US12543318B2Feb 3, 2026
Three-dimensional memory with stacked select-gate structures
YANGTZE MEMORY TECH CO LTD0 citations52
US10854628B2Dec 1, 2020
Three-dimensional memory device and manufacturing method thereof
YANGTZE MEMORY TECH CO LTD0 citations52
SPANSION LLC
5 patentsUS9252154B2Feb 2, 2016
Non-volatile memory with silicided bit line contacts
SPANSION LLC4 citations84
US8866213B2Oct 21, 2014
Non-Volatile memory with silicided bit line contacts
SPANSION LLC6 citations84
US7416940B1Aug 26, 2008
Methods for fabricating flash memory devices
SPANSION LLC17 citations84
US7053445B1May 30, 2006
Memory device with barrier layer
SPANSION LLC11 citations84
US7951675B2May 31, 2011
SI trench between bitline HDP for BVDSS improvement
SPANSION LLC3 citations61
INST GEOLOGY & GEOPHYSICS CAS
4 patentsUS11287356B1Mar 29, 2022
Variable angle loading testing machine
INST GEOLOGY & GEOPHYSICS CAS8 citations82
US11215543B1Jan 4, 2022
Rock mass shear test system for high-energy accelerator computed tomography (CT) scanning
INST GEOLOGY & GEOPHYSICS CAS5 citations71
US11371921B1Jun 28, 2022
Clamp and shear test device
INST GEOLOGY & GEOPHYSICS CAS2 citations68
US11802084B2Oct 31, 2023
Rock similar material satisfying water-induced strength degradation characteristic and preparation method and use thereof
INST GEOLOGY & GEOPHYSICS CAS0 citations58
CYPRESS SEMICONDUCTOR CORP
4 patentsUS10020317B2Jul 10, 2018
Memory device with multi-layer channel and charge trapping layer
CYPRESS SEMICONDUCTOR CORP7 citations82
US9831114B1Nov 28, 2017
Self-aligned trench isolation in integrated circuits
CYPRESS SEMICONDUCTOR CORP2 citations73
US9589805B2Mar 7, 2017
Split-gate semiconductor device with L-shaped gate
CYPRESS SEMICONDUCTOR CORP2 citations73
US9437470B2Sep 6, 2016
Self-aligned trench isolation in integrated circuits
CYPRESS SEMICONDUCTOR CORP3 citations73
GEN MILLS INC
2 patentsLIN CHUAN
1 patentEMC CORP
1 patentCHAN SIMON SIU-SING
1 patentXIAN THERMAL POWER RES INST CO
1 patentUNIV HONG KONG POLYTECHNIC
1 patentInfineon Technologies LLC
1 patentFASTOW RICHARD
1 patentFANG SHENQING
1 patentSUGINO RINJI
1 patentZhejiang Lab
1 patentShowing the top 50 of 93 patents by PatentIndex Score.