Inventor · disambiguated record
Joseph R. Radosevich
Also filed as: RADOSEVICH JOSEPH R · RADOSEVICH JOSEPH RUDOLPH
14 granted patents·1 pending application·393 citations·filing 1993–2006
94Inventor score
Top patents by PatentIndex Score
15 records- 0191US5576240AMethod for making a metal to metal capacitorLUCENT TECHNOLOGIES INC·Filed 1994·Granted Nov 19, 1996·69 cites·24 claims
- 0290US7605064B2Selective laser annealing of semiconductor materialAGERE SYSTEMS INC·Filed 2006·Granted Oct 20, 2009·15 cites·16 claims
- 0386US6602758B2Formation of silicon on insulator (SOI) devices as add-on modules for system on a chip processingAGERE SYSTEMS INC·Filed 2001·Granted Aug 5, 2003·44 cites·20 claims
- 0483US5298436AForming a device dielectric on a deposited semiconductor having sub-layersAT & T BELL LAB·Filed 1993·Granted Mar 29, 1994·54 cites·26 claims
- 0581US5654581AIntegrated circuit capacitorLUCENT TECHNOLOGIES INC·Filed 1995·Granted Aug 5, 1997·38 cites·4 claims
- 0676US6365511B1Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliabilityAGERE SYST GUARDIAN CORP·Filed 1999·Granted Apr 2, 2002·47 cites·13 claims
- 0776US5851870AMethod for making a capacitorLUCENT TECHNOLOGIES INC·Filed 1996·Granted Dec 22, 1998·31 cites·2 claims
- 0866US6537867B1High speed low voltage semiconductor devices and method of fabricationAGERE SYSTEMS INC·Filed 2000·Granted Mar 25, 2003·12 cites·37 claims
- 0965US6174807B1Method of controlling gate dopant penetration and diffusion in a semiconductor deviceLUCENT TECHNOLOGIES INC·Filed 1999·Granted Jan 16, 2001·24 cites·13 claims
- 1054US5825073AElectronic component for an integrated circuitLUCENT TECHNOLOGIES INC·Filed 1997·Granted Oct 20, 1998·11 cites·11 claims
- 1153US6331460B1Method of fabricating a mom capacitor having a metal silicide barrierAGERE SYST GUARDIAN CORP·Filed 1999·Granted Dec 18, 2001·17 cites·16 claims
- 1250US6335557B1Metal silicide as a barrier for MOM capacitors in CMOS technologiesAGERE SYST GUARDIAN CORP·Filed 1999·Granted Jan 1, 2002·14 cites·20 claims
- 1344US6040616ADevice and method of forming a metal to metal capacitor within an integrated circuitLUCENT TECHNOLOGIES INC·Filed 1997·Granted Mar 21, 2000·10 cites·10 claims
- 1442US6313021B1PMOS device having a layered silicon gate for improved silicide integrity and enhanced boron penetration resistanceAGERE SYST GUARDIAN CORP·Filed 1999·Granted Nov 6, 2001·7 cites·13 claims
- 1536US2002192914A1CMOS device fabrication utilizing selective laser anneal to form raised source/drain areasFiled 2001·Application pending·0 cites
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