Inventor
SU LI-LIN
TW20 patents
⚠️ This page may combine multiple inventors who share the name “SU LI-LIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS9530737B1Dec 27, 2016
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations92
US11088020B2Aug 10, 2021
Structure and formation method of interconnection structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9614052B2Apr 4, 2017
Copper contact plugs with barrier layers
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10534273B2Jan 14, 2020
Multi-metal fill with self-aligned patterning and dielectric with voids
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9721894B2Aug 1, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9589897B1Mar 7, 2017
Trench liner for removing impurities in a non-copper trench
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12062611B2Aug 13, 2024
Integrated circuit interconnect structures with air gaps
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11860550B2Jan 2, 2024
Multi-metal fill with self-aligned patterning and dielectric with voids
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11422475B2Aug 23, 2022
Multi-metal fill with self-aligned patterning and dielectric with voids
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11251131B2Feb 15, 2022
Copper contact plugs with barrier layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11244898B2Feb 8, 2022
Integrated circuit interconnect structures with air gaps
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11127680B2Sep 21, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10700010B2Jun 30, 2020
Copper contact plugs with barrier layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9935006B2Apr 3, 2018
Trench liner for removing impurities in a non-copper trench
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
4 patentsUS7704886B2Apr 27, 2010
Multi-step Cu seed layer formation for improving sidewall coverage
TAIWAN SEMICONDUCTOR MFG16 citations84
US7253501B2Aug 7, 2007
High performance metallization cap layer
TAIWAN SEMICONDUCTOR MFG9 citations74
US7453149B2Nov 18, 2008
Composite barrier layer
TAIWAN SEMICONDUCTOR MFG2 citations61
US8034709B2Oct 11, 2011
Method for forming composite barrier layer
TAIWAN SEMICONDUCTOR MFG0 citations51