Inventor

ZANG HUI

US405 patents

⚠️ This page may combine multiple inventors who share the name “ZANG HUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZANG HUI

GLOBALFOUNDRIES INC

Nanosheet field-effect transistor with full dielectric isolation

Method of forming field effect transistors with replacement metal gates and contacts and resulting structure

Fabricating stacked nanowire, field-effect transistors

Stacked nanosheet field-effect transistor with air gap spacers

Method of forming vertical field effect transistors with different gate lengths and a resulting structure

Methods of forming gate contact structures and cross-coupled contact structures for transistor devices

Vertical field effect transistor formation with critical dimension control

Forming long channel FinFET with short channel vertical FinFET and related integrated circuit

Asymmetric spacer for preventing epitaxial merge between adjacent devices of a semiconductor and related method

Cross couple structure for vertical transistors

Vertical transistor having buried contact, and contacts using work function metals and silicides

Stacked nanosheet field-effect transistor with diode isolation

FinFETs with air-gap spacers and methods for forming the same

Eliminating field oxide loss prior to FinFET source/drain epitaxial growth

Methods of forming replacement gate structures on semiconductor devices

Gate cut structure with liner spacer and related method

Memory array with buried bitlines below vertical field effect transistors of memory cells and a method of forming the memory array

Ultra-scale gate cut pillar with overlay immunity and method for producing the same

Fin-type field effect transistors with single-diffusion breaks and method

Apparatus and method of adjusting work-function metal thickness to provide variable threshold voltages in finFETs

Buried contact structures for a vertical field-effect transistor

Replacement metal gate patterning for nanosheet devices

Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a vertical field effect transistor

Two-port vertical SRAM circuit structure and method for producing the same

LDMOS FinFET structures with trench isolation in the drain extension

Methods of forming integrated circuit structures including opening filled with insulator in metal gate

Methods of forming source/drain contact structures on integrated circuit products

Methods of forming single diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products

Methods of forming gate contact structures and cross-coupled contact structures for transistor devices

Gate cut method after source/drain metallization

Transistor fins with different thickness gate dielectric

Fin field-effect transistor (FinFET) and method of production thereof

Contacts formed with self-aligned cuts

Self-aligned gate contact and cross-coupling contact formation

Method of forming vertical field effect transistors with self-aligned gates and gate extensions and the resulting structure

Vertical field-effect transistor having a dielectric spacer between a gate electrode edge and a self-aligned source/drain contact

ZANG HUI

User localization using friend location information

Telecom-fraud detection using device-location information

Communications-service fraud detection using special social connection

Anonymity determination for wireless communication device users

Method for increasing the number of concurrent page records sent to mobile stations

Statistical method for determining the location of a mobile device

SPRINT COMMUNICATIONS CO

Area based sub-path protection for communication networks

Parallel adaptive quantile wireless scheduler

Communication network design with wavelength converters

Using communications records to detect unauthorized use of telecommunication services

Software model for optical communication networks

BOLOT JEAN

Call detail record analysis to isolate and utilize subscriber data

OMNIVISION TECH INC

Dual floating diffusion transistor with vertical gate structure for image sensor

FUTUREWEI TECHNOLOGIES INC

Review machine learning system