Inventor
TODI RAVI M
US51 patents
⚠️ This page may combine multiple inventors who share the name “TODI RAVI M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
17 patentsUS9287272B2Mar 15, 2016
Metal trench capacitor and improved isolation and methods of manufacture
IBM5 citations84
US9054126B2Jun 9, 2015
Recessed single crystalline source and drain for semiconductor-on-insulator devices
IBM5 citations84
US9583497B2Feb 28, 2017
Metal trench capacitor and improved isolation and methods of manufacture
IBM3 citations73
US9397152B2Jul 19, 2016
Multilayer MIM capacitor
IBM4 citations73
US9058987B2Jun 16, 2015
Rare-earth oxide isolated semiconductor fin
IBM4 citations73
US9224801B2Dec 29, 2015
Multilayer MIM capacitor
IBM2 citations63
US9059213B2Jun 16, 2015
Embedded DRAM for extremely thin semiconductor-on-insulator
IBM2 citations63
US7825479B2Nov 2, 2010
Electrical antifuse having a multi-thickness dielectric layer
IBM4 citations63
US8836003B2Sep 16, 2014
Lateral epitaxial grown SOI in deep trench structures and methods of manufacture
IBM3 citations62
US10818668B2Oct 27, 2020
Metal trench capacitor and improved isolation and methods of manufacture
IBM0 citations52
US9899391B2Feb 20, 2018
Metal trench capacitor and improved isolation and methods of manufacture
IBM0 citations52
US9159578B2Oct 13, 2015
Self-aligned devices and methods of manufacture
IBM0 citations52
US8936992B2Jan 20, 2015
Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate
IBM0 citations52
US8754461B2Jun 17, 2014
Spacer isolation in deep trench
IBM0 citations52
US8372725B2Feb 12, 2013
Structures and methods of forming pre fabricated deep trench capacitors for SOI substrates
IBM0 citations52
US9257433B2Feb 9, 2016
Structure and method of forming enhanced array device isolation for implanted plate EDRAM
IBM0 citations51
US9087928B2Jul 21, 2015
High density memory cells using lateral epitaxy
IBM0 citations51
BOOTH JR ROGER A
10 patentsUS8921198B2Dec 30, 2014
Method and structure for forming a deep trench capacitor
BOOTH JR ROGER A8 citations84
US8846470B2Sep 30, 2014
Metal trench capacitor and improved isolation and methods of manufacture
BOOTH JR ROGER A5 citations84
US8222104B2Jul 17, 2012
Three dimensional integrated deep trench decoupling capacitors
BOOTH JR ROGER A6 citations84
US8809994B2Aug 19, 2014
Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate
BOOTH JR ROGER A2 citations63
US8691697B2Apr 8, 2014
Self-aligned devices and methods of manufacture
BOOTH JR ROGER A3 citations63
US8455979B2Jun 4, 2013
Three dimensional integrated deep trench decoupling capacitors
BOOTH JR ROGER A2 citations63
US8455875B2Jun 4, 2013
Embedded DRAM for extremely thin semiconductor-on-insulator
BOOTH JR ROGER A3 citations63
US8232162B2Jul 31, 2012
Forming implanted plates for high aspect ratio trenches using staged sacrificial layer removal
BOOTH JR ROGER A2 citations63
US8829585B2Sep 9, 2014
High density memory cells using lateral epitaxy
BOOTH JR ROGER A0 citations52
US8564069B1Oct 22, 2013
Field effect transistors with low body resistance and self-balanced body potential
BOOTH JR ROGER A0 citations52
GLOBALFOUNDRIES INC
5 patentsUS9478600B2Oct 25, 2016
Method of forming substrate contact for semiconductor on insulator (SOI) substrate
GLOBALFOUNDRIES INC6 citations84
US9461042B2Oct 4, 2016
Sublithographic width finFET employing solid phase epitaxy
GLOBALFOUNDRIES INC0 citations52
US9412640B2Aug 9, 2016
Semiconductor device including substrate contact and related method
GLOBALFOUNDRIES INC0 citations52
US9379177B2Jun 28, 2016
Deep trench capacitor
GLOBALFOUNDRIES INC1 citations52
US9293520B2Mar 22, 2016
Method of forming substrate contact for semiconductor on insulator (SOI) substrate
GLOBALFOUNDRIES INC0 citations52
CHENG KANGGUO
5 patentsUS9048339B2Jun 2, 2015
Deep trench capacitor
CHENG KANGGUO9 citations84
US8962423B2Feb 24, 2015
Multilayer MIM capacitor
CHENG KANGGUO8 citations84
US8853781B2Oct 7, 2014
Rare-earth oxide isolated semiconductor fin
CHENG KANGGUO10 citations84
US8637365B2Jan 28, 2014
Spacer isolation in deep trench
CHENG KANGGUO5 citations73
US8575670B2Nov 5, 2013
Embedded dynamic random access memory device formed in an extremely thin semiconductor on insulator (ETSOI) substrate
CHENG KANGGUO2 citations63
PEI CHENGWEN
3 patentsUS8409989B2Apr 2, 2013
Structure and method to fabricate a body contact
PEI CHENGWEN5 citations84
US8299530B2Oct 30, 2012
Structure and method to fabricate pFETS with superior GIDL by localizing workfunction
PEI CHENGWEN2 citations62
US9064745B2Jun 23, 2015
Sublithographic width finFET employing solid phase epitaxy
PEI CHENGWEN1 citations52
HO HERBERT L
3 patentsUS8298907B2Oct 30, 2012
Structure and method of forming enhanced array device isolation for implanted plate eDRAM
HO HERBERT L4 citations72
US8168507B2May 1, 2012
Structure and method of forming enhanced array device isolation for implanted plate EDRAM
HO HERBERT L5 citations72
US9059320B2Jun 16, 2015
Structure and method of forming enhanced array device isolation for implanted plate EDRAM
HO HERBERT L0 citations51
WANG GENG
2 patentsERVIN JOSEPH
2 patentsDUBE ABHISHEK
1 patentDYER THOMAS W
1 patentTODI RAVI M
1 patentShowing the top 50 of 51 patents by PatentIndex Score.