Inventor
LEE JAE-GON
KR114 patents
⚠️ This page may combine multiple inventors who share the name “LEE JAE-GON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS10296065B2May 21, 2019
Clock management using full handshaking
SAMSUNG ELECTRONICS CO LTD7 citations83
US11048645B2Jun 29, 2021
Memory module, operation method therof, and operation method of host
SAMSUNG ELECTRONICS CO LTD2 citations73
US10969854B2Apr 6, 2021
Semiconductor device including clock management unit for outputing clock and acknowledgement signals to an intellectual property block
SAMSUNG ELECTRONICS CO LTD1 citations72
US10303203B2May 28, 2019
Semiconductor device, semiconductor system and method for operating semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations72
US10248155B2Apr 2, 2019
Semiconductor device including clock generating circuit and channel management circuit
SAMSUNG ELECTRONICS CO LTD3 citations72
US11726701B2Aug 15, 2023
Memory expander, heterogeneous computing device using memory expander, and operation method of heterogenous computing
SAMSUNG ELECTRONICS CO LTD2 citations71
US11296416B2Apr 5, 2022
Metamaterial structure antenna and metamaterial structure array
SAMSUNG ELECTRONICS CO LTD2 citations71
US5754360AMay 19, 1998
Magnetic recording/reproducing apparatus
SAMSUNG ELECTRONICS CO LTD11 citations71
US10209734B2Feb 19, 2019
Semiconductor device, semiconductor system, and method of operating the semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations68
US12130657B2Oct 29, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11860687B2Jan 2, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11789515B2Oct 17, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11592861B2Feb 28, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
GLOBALFOUNDRIES INC
7 patentsUS9847391B1Dec 19, 2017
Stacked nanosheet field-effect transistor with diode isolation
GLOBALFOUNDRIES INC35 citations94
US10892338B2Jan 12, 2021
Scaled gate contact and source/drain cap
GLOBALFOUNDRIES INC2 citations73
US10475890B2Nov 12, 2019
Scaled memory structures or other logic devices with middle of the line cuts
GLOBALFOUNDRIES INC2 citations73
US10090204B1Oct 2, 2018
Vertical FINFET structure and methods of forming same
GLOBALFOUNDRIES INC4 citations73
US10068902B1Sep 4, 2018
Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and method
GLOBALFOUNDRIES INC4 citations73
US10553707B1Feb 4, 2020
FinFETs having gates parallel to fins
GLOBALFOUNDRIES INC5 citations71
US11569356B2Jan 31, 2023
Scaled gate contact and source/drain cap
GLOBALFOUNDRIES INC0 citations63
TOH ENG HUAT
6 patentsUS8492235B2Jul 23, 2013
FinFET with stressors
TOH ENG HUAT29 citations92
US9034711B2May 19, 2015
LDMOS with two gate stacks having different work functions for improved breakdown voltage
TOH ENG HUAT5 citations84
US8889494B2Nov 18, 2014
Finfet
TOH ENG HUAT14 citations84
US8748271B2Jun 10, 2014
LDMOS with improved breakdown voltage
TOH ENG HUAT13 citations84
US8750037B2Jun 10, 2014
Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereof
TOH ENG HUAT4 citations73
US8674457B2Mar 18, 2014
Methods to reduce gate contact resistance for AC reff reduction
TOH ENG HUAT6 citations73
CHARTERED SEMICONDUCTOR MFG
5 patentsUS7867835B2Jan 11, 2011
Integrated circuit system for suppressing short channel effects
CHARTERED SEMICONDUCTOR MFG116 citations97
US6946349B1Sep 20, 2005
Method for integrating a SONOS gate oxide transistor into a logic/analog integrated circuit having several gate oxide thicknesses
CHARTERED SEMICONDUCTOR MFG113 citations96
US7727856B2Jun 1, 2010
Selective STI stress relaxation through ion implantation
CHARTERED SEMICONDUCTOR MFG10 citations82
US7935589B2May 3, 2011
Enhanced stress for transistors
CHARTERED SEMICONDUCTOR MFG4 citations63
US7846800B2Dec 7, 2010
Avoiding plasma charging in integrated circuits
CHARTERED SEMICONDUCTOR MFG6 citations63
GLOBALFOUNDRIES SG PTE LTD
4 patentsUS9219147B2Dec 22, 2015
LDMOS with improved breakdown voltage
GLOBALFOUNDRIES SG PTE LTD6 citations84
US8975708B2Mar 10, 2015
Semiconductor device with reduced contact resistance and method of manufacturing thereof
GLOBALFOUNDRIES SG PTE LTD6 citations84
US8349692B2Jan 8, 2013
Channel surface technique for fabrication of FinFET devices
GLOBALFOUNDRIES SG PTE LTD9 citations84
US9406801B2Aug 2, 2016
FinFET
GLOBALFOUNDRIES SG PTE LTD5 citations73
LEE JAE GON
2 patentsKIM DONG KEUN
2 patentsUS8928385B2Jan 6, 2015
Methods of controlling clocks in system on chip including function blocks, systems on chips and semiconductor systems including the same
KIM DONG KEUN10 citations82
US9054680B2Jun 9, 2015
Methods of controlling clocks in system on chip including function blocks, systems on chips and semiconductor systems including the same
KIM DONG KEUN5 citations71
LEE JAE-GON
2 patentsUS9541992B2Jan 10, 2017
Method of performing dynamic voltage and frequency scaling operation, application processor performing method, and mobile device comprising application processor
LEE JAE-GON13 citations79
US9298251B2Mar 29, 2016
Methods of spreading plurality of interrupts, interrupt request signal spreader circuits, and systems-on-chips having the same
LEE JAE-GON4 citations71
KT & G CORP
2 patentsTAN CHUNG FOONG
1 patentUTOMO HENRY K
1 patentYIN CHUNSHAN
1 patentJEONG BUB-CHUL
1 patentHONGIK UNIV INDUSTRY ACADEMIA COOPERATION FOUNDATION
1 patentCHOI YOUN-SIK
1 patentTAN SHYUE SENG
1 patentShowing the top 50 of 114 patents by PatentIndex Score.