P

Inventor

MUNKHOLM ANNELI

US12 patents
⚠️ This page may combine multiple inventors who share the name “MUNKHOLM ANNELI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FACEBOOK TECH LLC

4 patents
US10573781B1Feb 25, 2020

Light emitting diode with tunnel junction

FACEBOOK TECH LLC20 citations93
US11175447B1Nov 16, 2021

Waveguide in-coupling using polarized light emitting diodes

FACEBOOK TECH LLC34 citations92
US10923630B1Feb 16, 2021

P—GaN-down micro-LED on semi-polar oriented GaN

FACEBOOK TECH LLC27 citations92
US11195973B1Dec 7, 2021

III-nitride micro-LEDs on semi-polar oriented GaN

FACEBOOK TECH LLC1 citations59

LUMILEDS LIGHTING LLC

2 patents
US6630692B2Oct 7, 2003

III-Nitride light emitting devices with low driving voltage

LUMILEDS LIGHTING LLC73 citations93
US6989555B2Jan 24, 2006

Strain-controlled III-nitride light emitting device

LUMILEDS LIGHTING LLC44 citations92

KONINKL PHILIPS ELECTRONICS NV

2 patents
US7906357B2Mar 15, 2011

P-type layer for a III-nitride light emitting device

KONINKL PHILIPS ELECTRONICS NV1 citations51
US8017958B2Sep 13, 2011

P-contact layer for a III-P semiconductor light emitting device

KONINKL PHILIPS ELECTRONICS NV0 citations49

META PLATFORMS TECH LLC

1 patent
US12298551B1May 13, 2025

Methods for correcting substrate thickness variation for waveguide applications

META PLATFORMS TECH LLC1 citations57

GRILLOT PATRICK N

1 patent
US8692286B2Apr 8, 2014

Light emitting device with bonded interface

GRILLOT PATRICK N2 citations55

LUMILEDS LLC

1 patent
US9905730B2Feb 27, 2018

Light emitting device with bonded interface

LUMILEDS LLC0 citations47

CHUNG THEODORE

1 patent
US8816368B2Aug 26, 2014

P-contact layer for a III-P semiconductor light emitting device

CHUNG THEODORE0 citations43