Inventor
PAWLAK BARTLOMIEJ JAN
BE34 patents
⚠️ This page may combine multiple inventors who share the name “PAWLAK BARTLOMIEJ JAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
18 patentsUS8716156B1May 6, 2014
Methods of forming fins for a FinFET semiconductor device using a mandrel oxidation process
GLOBALFOUNDRIES INC60 citations97
US9601379B1Mar 21, 2017
Methods of forming metal source/drain contact structures for semiconductor devices with gate all around channel structures
GLOBALFOUNDRIES INC22 citations88
US10304833B1May 28, 2019
Method of forming complementary nano-sheet/wire transistor devices with same depth contacts
GLOBALFOUNDRIES INC19 citations86
US10236379B2Mar 19, 2019
Vertical FET with self-aligned source/drain regions and gate length based on channel epitaxial growth process
GLOBALFOUNDRIES INC10 citations84
US10770440B2Sep 8, 2020
Micro-LED display assembly
GLOBALFOUNDRIES INC2 citations73
US10020395B2Jul 10, 2018
Semiconductor device with gate inside U-shaped channel and methods of making such a device
GLOBALFOUNDRIES INC2 citations73
US9741847B2Aug 22, 2017
Methods of forming a contact structure for a vertical channel semiconductor device and the resulting device
GLOBALFOUNDRIES INC3 citations73
US9704962B1Jul 11, 2017
Horizontal gate all around nanowire transistor bottom isolation
GLOBALFOUNDRIES INC4 citations73
US9558943B1Jan 31, 2017
Stress relaxed buffer layer on textured silicon surface
GLOBALFOUNDRIES INC6 citations73
US9166025B1Oct 20, 2015
Methods of forming a nanowire device with a gate-all-around-channel configuration and the resulting nanowire device
GLOBALFOUNDRIES INC5 citations73
US9368578B2Jun 14, 2016
Methods of forming substrates comprised of different semiconductor materials and the resulting device
GLOBALFOUNDRIES INC5 citations72
US10340369B2Jul 2, 2019
Tunneling field effect transistor
GLOBALFOUNDRIES INC0 citations52
US10128114B2Nov 13, 2018
Amorphization induced metal-silicon contact formation
GLOBALFOUNDRIES INC0 citations52
US9793384B2Oct 17, 2017
Tunneling field effect transistor and methods of making such a transistor
GLOBALFOUNDRIES INC0 citations52
US9711644B2Jul 18, 2017
Methods of making source/drain regions positioned inside U-shaped semiconductor material using source/drain placeholder structures
GLOBALFOUNDRIES INC1 citations52
US9076842B2Jul 7, 2015
Fin pitch scaling and active layer isolation
GLOBALFOUNDRIES INC0 citations51
US9716177B2Jul 25, 2017
Semiconductor device comprising a multi-layer channel region
GLOBALFOUNDRIES INC0 citations45
US9263555B2Feb 16, 2016
Methods of forming a channel region for a semiconductor device by performing a triple cladding process
GLOBALFOUNDRIES INC0 citations45
GLOBALFOUNDRIES US INC
5 patentsUS12521714B2Jan 13, 2026
Microfluidic channels in a substrate with a surface covered by a layer stack
GLOBALFOUNDRIES US INC0 citations62
US12265255B2Apr 1, 2025
Electro-absorption modulators with stacked waveguide tapers
GLOBALFOUNDRIES US INC0 citations62
US12339494B2Jun 24, 2025
Edge couplers with a fine-alignment mechanism
GLOBALFOUNDRIES US INC0 citations56
US12001056B2Jun 4, 2024
Light coupling between stacked photonics chips
GLOBALFOUNDRIES US INC0 citations52
US11774689B2Oct 3, 2023
Photonics chips and semiconductor products having angled optical fibers
GLOBALFOUNDRIES US INC0 citations47
NXP BV
3 patentsUS7615430B2Nov 10, 2009
Field effect transistor and method of manufacturing a field effect transistor
NXP BV4 citations63
US7491616B2Feb 17, 2009
Method of manufacturing a semiconductor device including dopant introduction
NXP BV2 citations63
US7348229B2Mar 25, 2008
Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
NXP BV0 citations38
PAWLAK BARTLOMIEJ JAN
2 patentsUS8187959B2May 29, 2012
Semiconductor substrate with solid phase epitaxial regrowth with reduced junction leakage and method of producing same
PAWLAK BARTLOMIEJ JAN94 citations94
US8900891B2Dec 2, 2014
Fabrication method for interdigitated back contact photovoltaic cells
PAWLAK BARTLOMIEJ JAN9 citations75
IMEC INTER UNI MICRO ELECTR
2 patentsUS7582547B2Sep 1, 2009
Method for junction formation in a semiconductor device and the semiconductor device made thereof
IMEC INTER UNI MICRO ELECTR10 citations84
US7326620B2Feb 5, 2008
Method of manufacturing a semiconductor device and semiconductor device obtainable with such a method
IMEC INTER UNI MICRO ELECTR0 citations42