P

Inventor

PAWLAK BARTLOMIEJ JAN

BE34 patents
⚠️ This page may combine multiple inventors who share the name “PAWLAK BARTLOMIEJ JAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

18 patents
US8716156B1May 6, 2014

Methods of forming fins for a FinFET semiconductor device using a mandrel oxidation process

GLOBALFOUNDRIES INC60 citations97
US9601379B1Mar 21, 2017

Methods of forming metal source/drain contact structures for semiconductor devices with gate all around channel structures

GLOBALFOUNDRIES INC22 citations88
US10304833B1May 28, 2019

Method of forming complementary nano-sheet/wire transistor devices with same depth contacts

GLOBALFOUNDRIES INC19 citations86
US10236379B2Mar 19, 2019

Vertical FET with self-aligned source/drain regions and gate length based on channel epitaxial growth process

GLOBALFOUNDRIES INC10 citations84
US10770440B2Sep 8, 2020

Micro-LED display assembly

GLOBALFOUNDRIES INC2 citations73
US10020395B2Jul 10, 2018

Semiconductor device with gate inside U-shaped channel and methods of making such a device

GLOBALFOUNDRIES INC2 citations73
US9741847B2Aug 22, 2017

Methods of forming a contact structure for a vertical channel semiconductor device and the resulting device

GLOBALFOUNDRIES INC3 citations73
US9704962B1Jul 11, 2017

Horizontal gate all around nanowire transistor bottom isolation

GLOBALFOUNDRIES INC4 citations73
US9558943B1Jan 31, 2017

Stress relaxed buffer layer on textured silicon surface

GLOBALFOUNDRIES INC6 citations73
US9166025B1Oct 20, 2015

Methods of forming a nanowire device with a gate-all-around-channel configuration and the resulting nanowire device

GLOBALFOUNDRIES INC5 citations73
US9368578B2Jun 14, 2016

Methods of forming substrates comprised of different semiconductor materials and the resulting device

GLOBALFOUNDRIES INC5 citations72
US10340369B2Jul 2, 2019

Tunneling field effect transistor

GLOBALFOUNDRIES INC0 citations52
US10128114B2Nov 13, 2018

Amorphization induced metal-silicon contact formation

GLOBALFOUNDRIES INC0 citations52
US9793384B2Oct 17, 2017

Tunneling field effect transistor and methods of making such a transistor

GLOBALFOUNDRIES INC0 citations52
US9711644B2Jul 18, 2017

Methods of making source/drain regions positioned inside U-shaped semiconductor material using source/drain placeholder structures

GLOBALFOUNDRIES INC1 citations52
US9076842B2Jul 7, 2015

Fin pitch scaling and active layer isolation

GLOBALFOUNDRIES INC0 citations51
US9716177B2Jul 25, 2017

Semiconductor device comprising a multi-layer channel region

GLOBALFOUNDRIES INC0 citations45
US9263555B2Feb 16, 2016

Methods of forming a channel region for a semiconductor device by performing a triple cladding process

GLOBALFOUNDRIES INC0 citations45

GLOBALFOUNDRIES US INC

5 patents

NXP BV

3 patents

PAWLAK BARTLOMIEJ JAN

2 patents

IMEC INTER UNI MICRO ELECTR

2 patents

TAIWAN SEMICONDUCTOR MFG

1 patent

KONINKL PHILIPS ELECTRONICS NV

1 patent

TAIWAN SEMICONDUCTOR MFG CO LTD

1 patent

IMEC

1 patent