Inventor
OGATA TAMOTSU
JP24 patents
⚠️ This page may combine multiple inventors who share the name “OGATA TAMOTSU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
17 patentsUS9825050B2Nov 21, 2017
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP5 citations83
US10249638B2Apr 2, 2019
Semiconductor device
RENESAS ELECTRONICS CORP2 citations73
US9831318B2Nov 28, 2017
Semiconductor device and a manufacturing method thereof
RENESAS ELECTRONICS CORP3 citations72
US10991709B2Apr 27, 2021
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations62
US10446569B2Oct 15, 2019
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP1 citations62
US10204789B2Feb 12, 2019
Manufacturing method of semiconductor device and semiconductor device
RENESAS ELECTRONICS CORP1 citations62
US10559581B2Feb 11, 2020
Semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US10593687B2Mar 17, 2020
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations51
US10522558B2Dec 31, 2019
Semiconductor device and method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP0 citations51
US10438961B2Oct 8, 2019
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations51
US10192879B2Jan 29, 2019
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations51
US10153293B2Dec 11, 2018
Semiconductor device and method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP1 citations51
US10090399B2Oct 2, 2018
Semiconductor device and a manufacturing method thereof
RENESAS ELECTRONICS CORP1 citations51
US9595532B2Mar 14, 2017
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations51
US9171928B2Oct 27, 2015
Manufacturing method of semiconductor device
RENESAS ELECTRONICS CORP1 citations49
US10424591B2Sep 24, 2019
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations41
US9768187B2Sep 19, 2017
Method of manufacturing split-gate non-volatile memory with hi-voltage and low-voltage peripheral circuitry
RENESAS ELECTRONICS CORP0 citations41
MITSUBISHI ELECTRIC CORP
6 patentsUS6599795B2Jul 29, 2003
Method of manufacturing semiconductor device including a step of forming a silicide layer, and semiconductor device manufactured thereby
MITSUBISHI ELECTRIC CORP35 citations92
US6159785ADec 12, 2000
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP22 citations92
US6215146B1Apr 10, 2001
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP18 citations84
US6593179B2Jul 15, 2003
Method of manufacturing a semiconductor device
MITSUBISHI ELECTRIC CORP2 citations62
US6323098B1Nov 27, 2001
Manufacturing method of a semiconductor device
MITSUBISHI ELECTRIC CORP5 citations62
US6207527B1Mar 27, 2001
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP0 citations41