Inventor
CHANTRE ALAIN
FR30 patents
⚠️ This page may combine multiple inventors who share the name “CHANTRE ALAIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SA
23 patentsUS6177717B1Jan 23, 2001
Low-noise vertical bipolar transistor and corresponding fabrication process
ST MICROELECTRONICS SA62 citations93
US6265275B1Jul 24, 2001
Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial base
ST MICROELECTRONICS SA38 citations92
US6551891B1Apr 22, 2003
Process for fabricating a self-aligned vertical bipolar transistor
ST MICROELECTRONICS SA21 citations91
US6472262B2Oct 29, 2002
Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor
ST MICROELECTRONICS SA23 citations91
US6316818B1Nov 13, 2001
Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process
ST MICROELECTRONICS SA30 citations91
US6744080B2Jun 1, 2004
Method of manufacturing a bipolar transistor of double-polysilicon, heterojunction-base type and corresponding transistor
ST MICROELECTRONICS SA15 citations83
US10488587B2Nov 26, 2019
Methods of fabricating integrated circuit devices with components on both sides of a semiconductor layer
ST MICROELECTRONICS SA11 citations82
US9507089B2Nov 29, 2016
Method of manufacturing a photonic integrated circuit optically coupled to a laser of III-V material
ST MICROELECTRONICS SA11 citations82
US10139563B2Nov 27, 2018
Method for making photonic chip with multi-thickness electro-optic devices and related devices
ST MICROELECTRONICS SA2 citations72
US9640631B2May 2, 2017
Bipolar transistor manufacturing method
ST MICROELECTRONICS SA3 citations72
US9461441B2Oct 4, 2016
Integrated hybrid laser source compatible with a silicon technology platform, and fabrication process
ST MICROELECTRONICS SA5 citations72
US6436782B2Aug 20, 2002
Process for fabricating a self-aligned double-polysilicon bipolar transistor
ST MICROELECTRONICS SA10 citations72
US6656812B1Dec 2, 2003
Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process
ST MICROELECTRONICS SA8 citations70
US6642096B2Nov 4, 2003
Bipolar transistor manufacturing
ST MICROELECTRONICS SA6 citations62
US7226844B2Jun 5, 2007
Method of manufacturing a bipolar transistor with a single-crystal base contact
ST MICROELECTRONICS SA0 citations52
US6902970B2Jun 7, 2005
Integrated circuit including, and fabrication method for producing, bipolar and MOSFET transistors
ST MICROELECTRONICS SA0 citations52
US10877211B2Dec 29, 2020
Methods of fabricating integrated circuit devices with components on both sides of a semiconductor layer
ST MICROELECTRONICS SA0 citations51
US6723610B2Apr 20, 2004
Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process
ST MICROELECTRONICS SA0 citations51
US7824978B2Nov 2, 2010
Bipolar transistor with high dynamic performances
ST MICROELECTRONICS SA0 citations50
US7122879B2Oct 17, 2006
Bipolar transistor with high dynamic performances
ST MICROELECTRONICS SA0 citations50
US9704967B2Jul 11, 2017
Heterojunction bipolar transistor
ST MICROELECTRONICS SA0 citations48
US9362380B2Jun 7, 2016
Heterojunction bipolar transistor
ST MICROELECTRONICS SA0 citations48
US7615455B2Nov 10, 2009
Integrated circuit bipolar transistor
ST MICROELECTRONICS SA0 citations42
COMMISSARIAT ENERGIE ATOMIQUE
4 patentsUS9899800B2Feb 20, 2018
Laser device and process for fabricating such a laser device
COMMISSARIAT ENERGIE ATOMIQUE33 citations91
US6403437B1Jun 11, 2002
Method for making hyperfrequency transistor
COMMISSARIAT ENERGIE ATOMIQUE7 citations71
US10014660B2Jul 3, 2018
Laser device and process for fabricating such a laser device
COMMISSARIAT ENERGIE ATOMIQUE2 citations70
US10511147B2Dec 17, 2019
Laser device and process for fabricating such a laser device
COMMISSARIAT ENERGIE ATOMIQUE0 citations49
FRANCE TELECOM
3 patentsUS6384469B1May 7, 2002
Vertical bipolar transistor, in particular with an SiGe heterojunction base, and fabrication process
FRANCE TELECOM39 citations92
US5367184ANov 22, 1994
Vertical JFET transistor with optimized bipolar operating mode and corresponding method of fabrication
FRANCE TELECOM31 citations92
US5340757AAug 23, 1994
Method of manufacturing a vertical field effect transistor
FRANCE TELECOM13 citations70