P

Inventor

CHANTRE ALAIN

FR30 patents
⚠️ This page may combine multiple inventors who share the name “CHANTRE ALAIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ST MICROELECTRONICS SA

23 patents
US6177717B1Jan 23, 2001

Low-noise vertical bipolar transistor and corresponding fabrication process

ST MICROELECTRONICS SA62 citations93
US6265275B1Jul 24, 2001

Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial base

ST MICROELECTRONICS SA38 citations92
US6551891B1Apr 22, 2003

Process for fabricating a self-aligned vertical bipolar transistor

ST MICROELECTRONICS SA21 citations91
US6472262B2Oct 29, 2002

Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor

ST MICROELECTRONICS SA23 citations91
US6316818B1Nov 13, 2001

Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process

ST MICROELECTRONICS SA30 citations91
US6744080B2Jun 1, 2004

Method of manufacturing a bipolar transistor of double-polysilicon, heterojunction-base type and corresponding transistor

ST MICROELECTRONICS SA15 citations83
US10488587B2Nov 26, 2019

Methods of fabricating integrated circuit devices with components on both sides of a semiconductor layer

ST MICROELECTRONICS SA11 citations82
US9507089B2Nov 29, 2016

Method of manufacturing a photonic integrated circuit optically coupled to a laser of III-V material

ST MICROELECTRONICS SA11 citations82
US10139563B2Nov 27, 2018

Method for making photonic chip with multi-thickness electro-optic devices and related devices

ST MICROELECTRONICS SA2 citations72
US9640631B2May 2, 2017

Bipolar transistor manufacturing method

ST MICROELECTRONICS SA3 citations72
US9461441B2Oct 4, 2016

Integrated hybrid laser source compatible with a silicon technology platform, and fabrication process

ST MICROELECTRONICS SA5 citations72
US6436782B2Aug 20, 2002

Process for fabricating a self-aligned double-polysilicon bipolar transistor

ST MICROELECTRONICS SA10 citations72
US6656812B1Dec 2, 2003

Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process

ST MICROELECTRONICS SA8 citations70
US6642096B2Nov 4, 2003

Bipolar transistor manufacturing

ST MICROELECTRONICS SA6 citations62
US7226844B2Jun 5, 2007

Method of manufacturing a bipolar transistor with a single-crystal base contact

ST MICROELECTRONICS SA0 citations52
US6902970B2Jun 7, 2005

Integrated circuit including, and fabrication method for producing, bipolar and MOSFET transistors

ST MICROELECTRONICS SA0 citations52
US10877211B2Dec 29, 2020

Methods of fabricating integrated circuit devices with components on both sides of a semiconductor layer

ST MICROELECTRONICS SA0 citations51
US6723610B2Apr 20, 2004

Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process

ST MICROELECTRONICS SA0 citations51
US7824978B2Nov 2, 2010

Bipolar transistor with high dynamic performances

ST MICROELECTRONICS SA0 citations50
US7122879B2Oct 17, 2006

Bipolar transistor with high dynamic performances

ST MICROELECTRONICS SA0 citations50
US9704967B2Jul 11, 2017

Heterojunction bipolar transistor

ST MICROELECTRONICS SA0 citations48
US9362380B2Jun 7, 2016

Heterojunction bipolar transistor

ST MICROELECTRONICS SA0 citations48
US7615455B2Nov 10, 2009

Integrated circuit bipolar transistor

ST MICROELECTRONICS SA0 citations42

COMMISSARIAT ENERGIE ATOMIQUE

4 patents

FRANCE TELECOM

3 patents