Inventor

SHINOHARA KEISUKE

JP49 patents

⚠️ This page may combine multiple inventors who share the name “SHINOHARA KEISUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHINOHARA KEISUKE

HRL LAB LLC

Monolithically integrated self-aligned GaN-HEMTs and Schottky diodes and method of fabricating the same

Stepped field plate wide bandgap field-effect transistor and method

Monolithic integration of group III nitride epitaxial layers

Stepped field plate wide bandgap field-effect transistor and method

Monolithically integrated self-aligned GaN-HEMTs and schottky diodes and method of fabricating the same

Methods of fabricating self-aligned FETS using multiple sidewall spacers

T-gate field effect transistor with non-linear channel layer and/or gate foot face

Flexible electronic circuit and method for manufacturing same

Monolithic integration of GaN and InP components

Etch-based fabrication process for stepped field-plate wide-bandgap

Apparatus and method for reducing the interface resistance in GaN Heterojunction FETs

Etch-based fabrication process for stepped field-plate wide-bandgap

Method of fabricating slanted field-plate GaN heterojunction field-effect transistor

Fabrication of microfluidic channels in diamond

HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same

Monolithic integration of group III nitride epitaxial layers

HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same

Gate metallization methods for self-aligned sidewall gate GaN HEMT

Monolithic integration of group III nitride epitaxial layers

Monolithic integration of group III nitride epitaxial layers

Flexible electronic circuit and method for manufacturing same

Monolithic integration of GaN and InP components

Method and structure for encapsulation and interconnection of transistors

DOWA METALTECH CO LTD

Silver-plated product

Silver-plated product

Silver-plated product and method for producing same

Silver-plated product

Method for producing silver-plated product

Silver-plated product and method for producing same

Silver-plated product and method for producing same

Silver-plated product and method for producing same

TELEDYNE SCIENT & IMAGING LLC

FET with micro-scale device array

FET with buried gate structure

Laterally-gated transistors and lateral Schottky diodes with integrated lateral field plate structures

Laterally-gated transistors and lateral Schottky diodes with integrated lateral field plate structures

System for self-aligned contacts

Ohmic contact for multiple channel FET

MICOVIC MIROSLAV

Near junction cooling for GaN devices

Apparatus and method for reducing the interface resistance in GaN heterojunction FETs

BROWN DAVID F

Monolithic integration of group III nitride enhancement layers

SAITO ATSUSHI

Waterproof hearing aid

TEIJIN LTD

Polycarbonate copolymer containing oxaspiroundecane group and production process therefor

CORRION ANDREA

Enhancement and depletion mode GaN HMETs on the same substrate

REGAN DEAN C

Gate metallization methods for self-aligned sidewall gate GaN HEMT

KHALIL SAMEH G

HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same

HRL LAB

Self-aligned sidewall gate GaN HEMT

TOYOTA MOTOR CO LTD

Different material joining method

URTEAGA MIGUEL

System for self-aligned contacts

SHARIFI HASAN

Method of integrating a plurality of benzocyclobutene layers with a substrate and an associated device