Inventor

JIANG Fa-Shen

TW47 patents

⚠️ This page may combine multiple inventors who share the name “JIANG Fa-Shen”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JIANG Fa-Shen

TAIWAN SEMICONDUCTOR MFG CO LTD

Memory device and method of manufacturing the same

RRAM structure

Film scheme to improve peeling in chalcogenide based PCRAM

Circuit design and layout with high embedded memory density

Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same

Circuit design and layout with high embedded memory density

Resistive memory cell having a low forming voltage

Resistive memory cell with switching layer comprising one or more dopants

Multi-doped data storage structure configured to improve resistive memory cell performance

Top-electrode barrier layer for RRAM

Method to enhance electrode adhesion stability

Circuit design and layout with high embedded memory density

RRAM structure

Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same

Diffusion barrier layer in top electrode to increase break down voltage

Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same

Integrated circuit device

Semiconductor device and method for manufacturing the same

Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same

Rram structure

Diffusion barrier layer in top electrode to increase break down voltage

RRAM structure

Semiconductor device and method for manufacturing the same

Thermal dispersion layer in programmable metallization cell

Resistive memory cell with switching layer comprising one or more dopants

RRAM device with improved performance

Resistive memory cell having a low forming voltage

Multi-doped data storage structure configured to improve resistive memory cell performance

Method for forming semiconductor structure

Top-electrode barrier layer for RRAM

Data storage structure for improving memory cell reliability

Memory window of MFM MOSFET for small cell size

Semiconductor device and method for manufacturing the same

Multilayer structure, capacitor structure and electronic device

Resistive memory cell with switching layer comprising one or more dopants

Method for fabricating integrated circuit device

Method for manufacturing thermal dispersion layer in programmable metallization cell

Memory window of MFM MOSFET for small cell size

Top-electrode barrier layer for RRAM

Data storage structure for improving memory cell reliability

Semiconductor device and method for manufacturing the same

Data storage structure for improving memory cell reliability

RRAM device with improved performance

Semiconductor structure having a phase change memory device

Film scheme to improve peeling in chalcogenide based PCRAM

Remote plasma ultraviolet enhanced deposition

WINBOND ELECTRONICS CORP

Conductive-bridging random access memory