P

Inventor

HA KYUNG SOO

KR45 patents
⚠️ This page may combine multiple inventors who share the name “HA KYUNG SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

35 patents
US10923175B2Feb 16, 2021

Memory device adjusting duty cycle and memory system having the same

SAMSUNG ELECTRONICS CO LTD15 citations93
US11393522B2Jul 19, 2022

Memory device adjusting duty cycle and memory system having the same

SAMSUNG ELECTRONICS CO LTD6 citations85
US10566038B2Feb 18, 2020

Method of controlling on-die termination and system performing the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US9397661B2Jul 19, 2016

On-die termination circuit and on-die termination method

SAMSUNG ELECTRONICS CO LTD8 citations84
US11423971B2Aug 23, 2022

Memory device adjusting duty cycle and memory system having the same

SAMSUNG ELECTRONICS CO LTD5 citations83
US11327838B2May 10, 2022

Memory device having error correction function and operating method thereof

SAMSUNG ELECTRONICS CO LTD7 citations82
US11626181B2Apr 11, 2023

Semiconductor memory devices and methods of operating semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD4 citations74
US10916279B2Feb 9, 2021

Method of controlling on-die termination and system performing the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US10720197B2Jul 21, 2020

Memory device for supporting command bus training mode and method of operating the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US10692554B2Jun 23, 2020

Method of controlling on-die termination and system performing the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US9805787B2Oct 31, 2017

Calibration circuit and memory device including the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US12033686B2Jul 9, 2024

Memory device adjusting duty cycle and memory system having the same

SAMSUNG ELECTRONICS CO LTD1 citations72
US11749338B2Sep 5, 2023

Memory device adjusting duty cycle and memory system having the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US11749337B2Sep 5, 2023

Memory device adjusting duty cycle and memory system having the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US11211102B2Dec 28, 2021

Method and memory system for optimizing on-die termination settings of multi-ranks in a multi-rank memory device

SAMSUNG ELECTRONICS CO LTD4 citations72
US10885950B2Jan 5, 2021

Method and memory system for optimizing on-die termination settings of multi-ranks in a multi-rank memory device

SAMSUNG ELECTRONICS CO LTD3 citations72
US10762947B2Sep 1, 2020

Memory devices

SAMSUNG ELECTRONICS CO LTD3 citations72
US10283186B2May 7, 2019

Data alignment circuit of a semiconductor memory device, a semiconductor memory device and a method of aligning data in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11508420B2Nov 22, 2022

Memory device, memory system, and operation method of memory device

SAMSUNG ELECTRONICS CO LTD1 citations71
US11062744B2Jul 13, 2021

Memory device performing ZQ calibration, memory system, and operation method of memory device

SAMSUNG ELECTRONICS CO LTD2 citations71
US10535394B2Jan 14, 2020

Memory device including dynamic voltage and frequency scaling switch and method of operating the same

SAMSUNG ELECTRONICS CO LTD2 citations70
US10529407B2Jan 7, 2020

Memory device including a plurality of power rails and method of operating the same

SAMSUNG ELECTRONICS CO LTD2 citations70
US12217823B2Feb 4, 2025

Memory device for supporting command bus training mode and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12148494B2Nov 19, 2024

Semiconductor memory devices and methods of operating semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US12106794B2Oct 1, 2024

Memory device adjusting duty cycle and memory system having the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12020767B2Jun 25, 2024

Method and memory system for optimizing on-die termination settings of multi-ranks in a multi-rank memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11921579B2Mar 5, 2024

Method of operating memory device, method of operating memory controller and memory system

SAMSUNG ELECTRONICS CO LTD0 citations62
US11715504B2Aug 1, 2023

Memory device for supporting command bus training mode and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11475930B2Oct 18, 2022

Method of controlling on-die termination and system performing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11195566B2Dec 7, 2021

Memory device and method for supporting command bus training mode based on one data signal

SAMSUNG ELECTRONICS CO LTD0 citations62
US10665558B2May 26, 2020

Semiconductor memory including pads arranged in parallel

SAMSUNG ELECTRONICS CO LTD1 citations62
US12211581B2Jan 28, 2025

Memory device, memory system, and operation method of memory device

SAMSUNG ELECTRONICS CO LTD0 citations60
US8742801B2Jun 3, 2014

Buffer circuit for semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US9438232B2Sep 6, 2016

Buffer circuit for compensating for a mismatch between on-die termination resistors and semiconductor device including the same, and operating method thereof

SAMSUNG ELECTRONICS CO LTD0 citations42
US9424897B2Aug 23, 2016

Equalizer and semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD0 citations42

HYUNDAI MOTOR CO LTD

10 patents