Inventor
KIM CHANG-RAE
KR12 patents
⚠️ This page may combine multiple inventors who share the name “KIM CHANG-RAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
11 patentsUS7031188B2Apr 18, 2006
Memory system having flash memory where a one-time programmable block is included
SAMSUNG ELECTRONICS CO LTD26 citations92
US5315173AMay 24, 1994
Data buffer circuit with delay circuit to increase the length of a switching transition period during data signal inversion
SAMSUNG ELECTRONICS CO LTD28 citations92
US6463002B2Oct 8, 2002
Refresh-type memory with zero write recovery time and no maximum cycle time
SAMSUNG ELECTRONICS CO LTD24 citations91
US6275437B1Aug 14, 2001
Refresh-type memory with zero write recovery time and no maximum cycle time
SAMSUNG ELECTRONICS CO LTD45 citations91
US5060197AOct 22, 1991
Static random access memory with redundancy
SAMSUNG ELECTRONICS CO LTD59 citations90
US5907283AMay 25, 1999
Power supply voltage detecting circuit for use in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD12 citations73
US5825698AOct 20, 1998
Redundancy decoding circuit for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD13 citations73
US6510094B2Jan 21, 2003
Method and apparatus for refreshing semiconductor memory
SAMSUNG ELECTRONICS CO LTD12 citations72
US7975178B2Jul 5, 2011
Memory device and system with cyclic, ECC-corrected bootloading operation during voltage bring up
SAMSUNG ELECTRONICS CO LTD6 citations61
US7376825B2May 20, 2008
System and method for accessing vital data from memory
SAMSUNG ELECTRONICS CO LTD1 citations51
US7301845B2Nov 27, 2007
Defect address storing circuit for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations41