Inventor
RADOVANOV SVETLANA B
US31 patents
⚠️ This page may combine multiple inventors who share the name “RADOVANOV SVETLANA B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VARIAN SEMICONDUCTOR EQUIPMENT
13 patentsUS9230773B1Jan 5, 2016
Ion beam uniformity control
VARIAN SEMICONDUCTOR EQUIPMENT20 citations92
US9288889B2Mar 15, 2016
Apparatus and techniques for energetic neutral beam processing
VARIAN SEMICONDUCTOR EQUIPMENT7 citations84
US9093372B2Jul 28, 2015
Technique for processing a substrate
VARIAN SEMICONDUCTOR EQUIPMENT6 citations82
US9064795B2Jun 23, 2015
Technique for processing a substrate
VARIAN SEMICONDUCTOR EQUIPMENT8 citations82
US7675047B2Mar 9, 2010
Technique for shaping a ribbon-shaped ion beam
VARIAN SEMICONDUCTOR EQUIPMENT9 citations82
US7279687B2Oct 9, 2007
Technique for implementing a variable aperture lens in an ion implanter
VARIAN SEMICONDUCTOR EQUIPMENT11 citations82
US7309997B1Dec 18, 2007
Monitor system and method for semiconductor processes
VARIAN SEMICONDUCTOR EQUIPMENT14 citations77
US9232628B2Jan 5, 2016
Method and system for plasma-assisted ion beam processing
VARIAN SEMICONDUCTOR EQUIPMENT4 citations73
US8669538B1Mar 11, 2014
Method of improving ion beam quality in an implant system
VARIAN SEMICONDUCTOR EQUIPMENT3 citations62
US7579605B2Aug 25, 2009
Multi-purpose electrostatic lens for an ion implanter system
VARIAN SEMICONDUCTOR EQUIPMENT4 citations62
US7339179B2Mar 4, 2008
Technique for providing a segmented electrostatic lens in an ion implanter
VARIAN SEMICONDUCTOR EQUIPMENT2 citations57
US9024282B2May 5, 2015
Techniques and apparatus for high rate hydrogen implantation and co-implantion
VARIAN SEMICONDUCTOR EQUIPMENT0 citations41
US8907300B2Dec 9, 2014
System and method for plasma control using boundary electrode
VARIAN SEMICONDUCTOR EQUIPMENT0 citations41
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC
13 patentsUS9922795B2Mar 20, 2018
High brightness ion beam extraction using bias electrodes and magnets proximate the extraction aperture
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations73
US9613777B2Apr 4, 2017
Uniformity control using adjustable internal antennas
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations73
US9478399B2Oct 25, 2016
Multi-aperture extraction system for angled ion beam
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC5 citations73
US10290466B2May 14, 2019
Boron implanting using a co-gas
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC1 citations72
US9865430B2Jan 9, 2018
Boron implanting using a co-gas
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC3 citations72
US9840772B2Dec 12, 2017
Method of improving ion beam quality in a non-mass-analyzed ion implantation system
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations72
US9677171B2Jun 13, 2017
Method of improving ion beam quality in a non-mass-analyzed ion implantation system
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations72
US11049691B2Jun 29, 2021
Ion beam quality control using a movable mass resolving device
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC1 citations61
US10290462B2May 14, 2019
High brightness ion beam extraction using bias electrodes and magnets proximate the extraction aperture
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations52
US9520259B2Dec 13, 2016
Ion beam uniformity control
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations52
US10290470B2May 14, 2019
Negative ribbon ion beams from pulsed plasmas
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations51
US9734991B2Aug 15, 2017
Negative ribbon ion beams from pulsed plasmas
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC1 citations51
US9988711B2Jun 5, 2018
Apparatus and method for multilayer deposition
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations41