Inventor
WANG YAO-JHAN
TW22 patents
⚠️ This page may combine multiple inventors who share the name “WANG YAO-JHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
20 patentsUS10211314B1Feb 19, 2019
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP7 citations83
US10037915B1Jul 31, 2018
Fabricating method of a semiconductor structure with an epitaxial layer
UNITED MICROELECTRONICS CORP8 citations83
US10249729B1Apr 2, 2019
Method for fabricating metal replacement gate semiconductor device using dummy gate and composite spacer structure
UNITED MICROELECTRONICS CORP7 citations82
US11742412B2Aug 29, 2023
Method for fabricating a metal gate transistor with a stacked double sidewall spacer structure
UNITED MICROELECTRONICS CORP0 citations62
US11355619B2Jun 7, 2022
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US10777657B2Sep 15, 2020
Metal gate transistor with a stacked double sidewall spacer structure
UNITED MICROELECTRONICS CORP1 citations62
US11929418B2Mar 12, 2024
Metal gate structure and method of fabricating the same
UNITED MICROELECTRONICS CORP0 citations61
US11881518B2Jan 23, 2024
Metal gate structure and method of fabricating the same
UNITED MICROELECTRONICS CORP0 citations61
US11569235B2Jan 31, 2023
Semiconductor device and method of manufacturing the same
UNITED MICROELECTRONICS CORP0 citations61
US11205705B2Dec 21, 2021
Metal gate structure and method of fabricating the same
UNITED MICROELECTRONICS CORP0 citations61
US10957762B2Mar 23, 2021
Manufacturing method of semiconductor device including conductive structure
UNITED MICROELECTRONICS CORP0 citations61
US10892365B2Jan 12, 2021
Fin field effect transistor having crystalline titanium germanosilicide stressor layer
UNITED MICROELECTRONICS CORP0 citations61
US10700163B2Jun 30, 2020
Semiconductor device including conductive structure and manufacturing method thereof
UNITED MICROELECTRONICS CORP1 citations61
US10608113B1Mar 31, 2020
Semiconductor structure and fabrication method thereof
UNITED MICROELECTRONICS CORP1 citations61
US10217866B2Feb 26, 2019
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP1 citations61
US10868011B2Dec 15, 2020
Semiconductor device and method of manufacturing the same
UNITED MICROELECTRONICS CORP0 citations51
US10651290B2May 12, 2020
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations51
US10686079B1Jun 16, 2020
Fin field effect transistor structure with particular gate appearance
UNITED MICROELECTRONICS CORP0 citations50
US10446682B2Oct 15, 2019
Method of forming semiconductor device
UNITED MICROELECTRONICS CORP0 citations50
US10211107B1Feb 19, 2019
Method of fabricating fins including removing dummy fins after fluorocarbon flush step and oxygen clean step
UNITED MICROELECTRONICS CORP0 citations40