P

Inventor

LO YI-CHUN

TW17 patents
⚠️ This page may combine multiple inventors who share the name “LO YI-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

14 patents
US11296201B2Apr 5, 2022

Gate structure and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11038035B2Jun 15, 2021

Semiconductor structure with enlarged gate electrode structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations81
US10686049B2Jun 16, 2020

Gate structure and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10262894B2Apr 16, 2019

FinFET device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US9887130B2Feb 6, 2018

FinFET device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10170554B2Jan 1, 2019

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations70
US9748350B2Aug 29, 2017

Semiconductor structure with enlarged gate electrode structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US9231098B2Jan 5, 2016

Mechanism for forming metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations70
US12015068B2Jun 18, 2024

Gate structure and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10008574B2Jun 26, 2018

Gate structure and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12191366B2Jan 7, 2025

Semiconductor structure with enlarged gate electrode structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10312338B2Jun 4, 2019

Gate structure and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10141416B2Nov 27, 2018

Semiconductor structure with enlarged gate electrode structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US9496367B2Nov 15, 2016

Mechanism for forming metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49

CHENG SHU-HUI

1 patent

UNIVERSAL SCIENT INDUSTRIAL (SHANGHAI) CO LTD

1 patent

IND TECH RES INST

1 patent