Inventor

WANG PEI-HSUN

TW47 patents

⚠️ This page may combine multiple inventors who share the name “WANG PEI-HSUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG PEI-HSUN

TAIWAN SEMICONDUCTOR MFG CO LTD

Gate-all-around structure and methods of forming the same

Structure and method for gate-all-around device with extended channel

Methods of fabricating a FinFET device with wrap-around silicide source/drain structure

Dual channel gate all around transistor device and fabrication methods thereof

Gate all around structure with additional silicon layer and method for forming the same

FET with wrap-around silicide and fabrication methods thereof

Transistors having vertical nanostructures

FET with wrap-around silicide and fabrication methods thereof

Gate-all-around structure and methods of forming the same

Dual channel gate all around transistor device and fabrication methods thereof

Gate all around structure with additional silicon layer and method for forming the same

Semiconductor structure with nanostructure and method for manufacturing the same

Multi-gate devices and method of fabricating the same

Selective inner spacer implementations

Semiconductor device structure and method for forming the same

FinFET devices and methods of forming the same

Methods of fabricating semiconductor devices having air-gap spacers

Methods of fabricating semiconductor devices with gate-all-around structure

Hybrid source drain regions formed based on same fin and methods forming same

Semiconductor device and method of forming the same

Semiconductor structure and method for forming the same

Hybrid source drain regions formed based on same Fin and methods forming same

FET with wrap-around silicide and fabrication methods thereof

Transistors having vertical nanostructures

Self-aligned source/drain metal contact

Semiconductor device structure and method for forming the same

Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process

Hybrid channel semiconductor device and method

Dual channel gate all around transistor device and fabrication methods thereof

FinFET devices and methods of forming the same

Multi-gate devices and method of fabricating the same

Semiconductor devices having air-gap

FinFET devices and methods of forming the same

Semiconductor structure with hybrid nanostructures

Hybrid channel semiconductor device and method

Gate all around structure with additional silicon layer and method for forming the same

Dual channel gate all around transistor device and fabrication methods thereof

Multi-gate devices and method of fabricating the same

Semiconductor devices having air-gap spacers

Inner spacers for gate-all-around transistors

Hybrid channel semiconductor device and method

Method of forming self-aligned source/drain metal contacts

Dual channel gate all around transistor device and fabrication methods thereof

Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process

Inner spacers for gate-all-around transistors

PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC

Gate-all-around structure and methods of forming the same

Gate-all-around structure and methods of forming the same