Inventor
CHOU CHIH-CHAO
TW35 patents
Patents
35 patentsUS10833003B1Nov 10, 2020
Integrated circuits with backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US11264327B2Mar 1, 2022
Backside power rail structure and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations86
US11444170B1Sep 13, 2022
Semiconductor device with backside self-aligned power rail and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11158727B2Oct 26, 2021
Structure and method for gate-all-around device with extended channel
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10944009B2Mar 9, 2021
Methods of fabricating a FinFET device with wrap-around silicide source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10804162B2Oct 13, 2020
Dual channel gate all around transistor device and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10510860B2Dec 17, 2019
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11996483B2May 28, 2024
FET with wrap-around silicide and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11916125B2Feb 27, 2024
Semiconductor device with backside self-aligned power rail and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11842965B2Dec 12, 2023
Backside power rail structure and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11742280B2Aug 29, 2023
Integrated circuits with backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11695076B2Jul 4, 2023
FET with wrap-around silicide and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11532521B2Dec 20, 2022
Dual channel gate all around transistor device and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11387181B2Jul 12, 2022
Integrated circuits with backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11348836B2May 31, 2022
Semiconductor structure with nanostructure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10811515B2Oct 20, 2020
Methods of fabricating semiconductor devices having air-gap spacers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10727134B2Jul 28, 2020
Methods of fabricating semiconductor devices with gate-all-around structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12368078B2Jul 22, 2025
Dual-side power rail design and method of making same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12237233B2Feb 25, 2025
Backside power rail for physical failure analysis (PFA)
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11031481B2Jun 8, 2021
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12439638B2Oct 7, 2025
FET with wrap-around silicide and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402405B2Aug 26, 2025
Integration of multiple fin stuctures on a single substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317542B2May 27, 2025
Semiconductor device with backside self-aligned power rail and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12198986B2Jan 14, 2025
Dual channel gate all around transistor device and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183678B2Dec 31, 2024
Backside power rail structure and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12057385B2Aug 6, 2024
Integrated circuits with backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11973079B2Apr 30, 2024
Integration of multiple fin structures on a single substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855178B2Dec 26, 2023
Semiconductor devices having air-gap
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11776854B2Oct 3, 2023
Semiconductor structure with hybrid nanostructures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721594B2Aug 8, 2023
Dual channel gate all around transistor device and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11563104B2Jan 24, 2023
Semiconductor devices having air-gap spacers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342325B2May 24, 2022
Integration of multiple fin structures on a single substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11251090B2Feb 15, 2022
Dual channel gate all around transistor device and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10756196B2Aug 25, 2020
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10756197B2Aug 25, 2020
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52