Inventor

YEH NAI J

TW2 patents

Patents

2 patents

US5482888AJan 9, 1996

Method of manufacturing a low resistance, high breakdown voltage, power MOSFET

UNITED MICROELECTRONICS CORP22 citations89

US5334543AAug 2, 1994

Method of making reverse lightly doped drain (LDD) for buried N+ conductor

UNITED MICROELECTRONICS CORP3 citations57