P

Inventor

PENG YUAN-CHING

TW59 patents
⚠️ This page may combine multiple inventors who share the name “PENG YUAN-CHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

40 patents
US11935781B2Mar 19, 2024

Integrated circuit structure with backside dielectric layer having air gap

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations86
US9029912B2May 12, 2015

Semiconductor substructure having elevated strain material-sidewall interface and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11437245B2Sep 6, 2022

Germanium hump reduction

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations81
US11450559B2Sep 20, 2022

Integrated circuit structure with backside dielectric layer having air gap

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11417767B2Aug 16, 2022

Semiconductor devices including backside vias and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11374128B2Jun 28, 2022

Method and structure for air gap inner spacer in gate-all-around devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12113113B2Oct 8, 2024

Semiconductor device with a core-shell feature and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11888049B2Jan 30, 2024

Dielectric isolation structure for multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12426297B2Sep 23, 2025

Method and structure for air gap inner spacer in gate-all-around devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US9224737B2Dec 29, 2015

Dual epitaxial process for a finFET device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations63
US12369334B2Jul 22, 2025

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12310057B2May 20, 2025

Semiconductor devices including backside vias and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12308287B2May 20, 2025

Integrated circuit structure with backside dielectric layer having air gap

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12268023B2Apr 1, 2025

Devices with improved operational current and reduced leakage current

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12255102B2Mar 18, 2025

Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12237232B2Feb 25, 2025

Methods for forming source/drain features

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12191370B2Jan 7, 2025

Semiconductor device with tunable channel layer usage and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12062692B2Aug 13, 2024

Tapered dielectric layer for preventing electrical shorting between gate and back side via

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040407B2Jul 16, 2024

Semiconductor devices including backside vias and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12002845B2Jun 4, 2024

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862709B2Jan 2, 2024

Inner spacer structure and methods of forming such

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11855220B2Dec 26, 2023

Method and structure for air gap inner spacer in gate-all-around devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349381B2Jul 1, 2025

Dielectric isolation structure for multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12230712B2Feb 18, 2025

Dielectric fin structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12205907B2Jan 21, 2025

Seal ring structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12166076B2Dec 10, 2024

Semiconductor device and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11735665B2Aug 22, 2023

Dielectric fin structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11532733B1Dec 20, 2022

Dielectric isolation structure for multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11404576B2Aug 2, 2022

Dielectric fin structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12166096B2Dec 10, 2024

Semiconductor device structure with uneven gate profile

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11631745B2Apr 18, 2023

Semiconductor device structure with uneven gate profile

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11854819B2Dec 26, 2023

Germanium hump reduction

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11764277B2Sep 19, 2023

Semiconductor structure and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11848241B2Dec 19, 2023

Semiconductor structure and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US11328959B2May 10, 2022

Semiconductor structure and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US12249539B2Mar 11, 2025

Multigate device structure with engineered cladding and method making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations55
US11799002B2Oct 24, 2023

Semiconductor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9263578B2Feb 16, 2016

Semiconductor substructure having elevated strain material-sidewall interface and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12477712B2Nov 18, 2025

Memory structure and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12426347B2Sep 23, 2025

Multi-gate transistor channel height adjustment

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

TAIWAN SEMICONDUCTOR MFG

4 patents

UNITED MICROELECTRONICS CORP

3 patents

CHEN HUNG-KAI

1 patent

LAI KAO-TING

1 patent

IND TECH RES INST

1 patent

Showing the top 50 of 59 patents by PatentIndex Score.