Inventor
PENG YUAN-CHING
TW59 patents
⚠️ This page may combine multiple inventors who share the name “PENG YUAN-CHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
40 patentsUS11935781B2Mar 19, 2024
Integrated circuit structure with backside dielectric layer having air gap
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations86
US9029912B2May 12, 2015
Semiconductor substructure having elevated strain material-sidewall interface and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11437245B2Sep 6, 2022
Germanium hump reduction
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations81
US11450559B2Sep 20, 2022
Integrated circuit structure with backside dielectric layer having air gap
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11417767B2Aug 16, 2022
Semiconductor devices including backside vias and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11374128B2Jun 28, 2022
Method and structure for air gap inner spacer in gate-all-around devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12113113B2Oct 8, 2024
Semiconductor device with a core-shell feature and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11888049B2Jan 30, 2024
Dielectric isolation structure for multi-gate transistors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12426297B2Sep 23, 2025
Method and structure for air gap inner spacer in gate-all-around devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US9224737B2Dec 29, 2015
Dual epitaxial process for a finFET device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations63
US12369334B2Jul 22, 2025
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12310057B2May 20, 2025
Semiconductor devices including backside vias and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12308287B2May 20, 2025
Integrated circuit structure with backside dielectric layer having air gap
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12268023B2Apr 1, 2025
Devices with improved operational current and reduced leakage current
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12255102B2Mar 18, 2025
Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12237232B2Feb 25, 2025
Methods for forming source/drain features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12191370B2Jan 7, 2025
Semiconductor device with tunable channel layer usage and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12062692B2Aug 13, 2024
Tapered dielectric layer for preventing electrical shorting between gate and back side via
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040407B2Jul 16, 2024
Semiconductor devices including backside vias and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12002845B2Jun 4, 2024
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862709B2Jan 2, 2024
Inner spacer structure and methods of forming such
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11855220B2Dec 26, 2023
Method and structure for air gap inner spacer in gate-all-around devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349381B2Jul 1, 2025
Dielectric isolation structure for multi-gate transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12230712B2Feb 18, 2025
Dielectric fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12205907B2Jan 21, 2025
Seal ring structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12166076B2Dec 10, 2024
Semiconductor device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11735665B2Aug 22, 2023
Dielectric fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11532733B1Dec 20, 2022
Dielectric isolation structure for multi-gate transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11404576B2Aug 2, 2022
Dielectric fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12166096B2Dec 10, 2024
Semiconductor device structure with uneven gate profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11631745B2Apr 18, 2023
Semiconductor device structure with uneven gate profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11854819B2Dec 26, 2023
Germanium hump reduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11764277B2Sep 19, 2023
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11848241B2Dec 19, 2023
Semiconductor structure and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US11328959B2May 10, 2022
Semiconductor structure and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US12249539B2Mar 11, 2025
Multigate device structure with engineered cladding and method making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations55
US11799002B2Oct 24, 2023
Semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9263578B2Feb 16, 2016
Semiconductor substructure having elevated strain material-sidewall interface and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12477712B2Nov 18, 2025
Memory structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12426347B2Sep 23, 2025
Multi-gate transistor channel height adjustment
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
4 patentsUS7663237B2Feb 16, 2010
Butted contact structure
TAIWAN SEMICONDUCTOR MFG35 citations88
US7349234B2Mar 25, 2008
Magnetic memory array
TAIWAN SEMICONDUCTOR MFG9 citations84
US7173841B2Feb 6, 2007
Magnetic memory array
TAIWAN SEMICONDUCTOR MFG10 citations79
US8372719B2Feb 12, 2013
Hard mask removal for semiconductor devices
TAIWAN SEMICONDUCTOR MFG5 citations73
UNITED MICROELECTRONICS CORP
3 patentsUS6043148AMar 28, 2000
Method of fabricating contact plug
UNITED MICROELECTRONICS CORP21 citations89
US5897373AApr 27, 1999
Method of manufacturing semiconductor components having a titanium nitride layer
UNITED MICROELECTRONICS CORP7 citations73
US6022457AFeb 8, 2000
Method of manufacturing cobalt silicide layer
UNITED MICROELECTRONICS CORP11 citations71
CHEN HUNG-KAI
1 patentLAI KAO-TING
1 patentIND TECH RES INST
1 patentShowing the top 50 of 59 patents by PatentIndex Score.