Inventor

YE SHAN

TW3 patents

Patents

3 patents

US10204788B1Feb 12, 2019

Method of forming high dielectric constant dielectric layer by atomic layer deposition

UNITED MICROELECTRONICS CORP341 citations98

US9871136B2Jan 16, 2018

Semiconductor device

UNITED MICROELECTRONICS CORP7 citations82

US9330902B1May 3, 2016

Method for forming HfOx film based on atomic layer deposition (ALD) process

UNITED MICROELECTRONICS CORP2 citations62