Inventor · disambiguated record
Takayoshi Higuchi
Also filed as: HIGUCHI TAKAYOSHI
8 granted patents·343 citations·filing 1984–1998
89Inventor score
Top patents by PatentIndex Score
8 records- 0196US4570325AManufacturing a field oxide region for a semiconductor deviceTOSHIBA KK·Filed 1984·Granted Feb 18, 1986·181 cites·11 claims
- 0285US5734195ASemiconductor wafer for epitaxially grown devices having a sub-surface getter regionSONY CORP·Filed 1996·Granted Mar 31, 1998·63 cites·17 claims
- 0373US5874348ASemiconductor wafer and method of manufacturing sameSONY CORP·Filed 1996·Granted Feb 23, 1999·34 cites·11 claims
- 0463US4684740AProduction of 2,6-bis (4-hydroxy-3,5-dimethoxyphenyl-3,7-dioxabicyclo (3.3.0) octaneJUJO PAPER CO LTD·Filed 1986·Granted Aug 4, 1987·14 cites·13 claims
- 0560US6140213ASemiconductor wafer and method of manufacturing sameSONY CORP·Filed 1998·Granted Oct 31, 2000·19 cites·28 claims
- 0655US5106780ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1991·Granted Apr 21, 1992·25 cites·2 claims
- 0731US5160988ASemiconductor device with composite surface insulatorTOSHIBA KK·Filed 1991·Granted Nov 3, 1992·4 cites·10 claims
- 0830US5014109AMiniaturization of a contact hole in a semiconductor deviceTOSHIBA KK·Filed 1989·Granted May 7, 1991·3 cites·10 claims
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