P

Inventor

YANG MENGMENG

CN16 patents
⚠️ This page may combine multiple inventors who share the name “YANG MENGMENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANGXIN MEMORY TECH INC

13 patents
US11862697B2Jan 2, 2024

Method for manufacturing buried gate and method for manufacturing semiconductor device

CHANGXIN MEMORY TECH INC0 citations62
US12495537B2Dec 9, 2025

Method for manufacturing semiconductor structure, semiconductor structure and semiconductor memory

CHANGXIN MEMORY TECH INC0 citations61
US12402300B2Aug 26, 2025

Semiconductor device having channel regions distributed on two opposite sides of a gate electrode

CHANGXIN MEMORY TECH INC0 citations61
US12526979B2Jan 13, 2026

Memory and method for manufacturing memory

CHANGXIN MEMORY TECH INC0 citations51
US12513879B2Dec 30, 2025

Method of manufacturing capacitor, capacitor, and memory

CHANGXIN MEMORY TECH INC0 citations51
US12356602B2Jul 8, 2025

Memory and method for preparing memory

CHANGXIN MEMORY TECH INC0 citations51
US12185525B2Dec 31, 2024

Method for manufacturing semiconductor device and semiconductor device

CHANGXIN MEMORY TECH INC0 citations51
US12148619B2Nov 19, 2024

Manufacturing method for semiconductor structure, and semiconductor structure

CHANGXIN MEMORY TECH INC0 citations51
US12119222B2Oct 15, 2024

Method for preparing semiconductor structure and semiconductor structure

CHANGXIN MEMORY TECH INC0 citations51
US12062702B2Aug 13, 2024

Method for manufacturing semiconductor structure and semiconductor structure

CHANGXIN MEMORY TECH INC0 citations51
US11864373B2Jan 2, 2024

Method for manufacturing semiconductor structure with core and peripheral regions and semiconductor structure thereof

CHANGXIN MEMORY TECH INC0 citations51
US12256568B2Mar 18, 2025

Semiconductor structure having two N-type devices and two P-type devices and manufacturing method thereof

CHANGXIN MEMORY TECH INC0 citations50
US12532448B2Jan 20, 2026

Semiconductor structure and method for manufacturing semiconductor structure

CHANGXIN MEMORY TECH INC0 citations49

INST OF MICROELECTRONICS CAS

1 patent

CROWN BIOSCIENCE INC TAICANG

1 patent

UNIV JILIN

1 patent